Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

(2011) Bosul Kim et al.   APPLIED PHYSICS LETTERS

Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

(2011) Sungsik Lee et al.   APPLIED PHYSICS LETTERS

O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

(2010) Byungki Ryu et al.   APPLIED PHYSICS LETTERS

Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films

(2010) Hyungtak Seo et al.   APPLIED PHYSICS LETTERS

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

(2010) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

(2010) Te-Chih Chen et al.   APPLIED PHYSICS LETTERS

Density of trap states measured by photon probe into ZnO based thin-film transistors

(2010) Kimoon Lee et al.   APPLIED PHYSICS LETTERS

Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

(2010) S.W. Tsao et al.   SOLID-STATE ELECTRONICS

The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

(2009) Jaeseob Lee et al.   APPLIED PHYSICS LETTERS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

(2009) Jeong-Min Lee et al.   APPLIED PHYSICS LETTERS

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS