Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy

Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities

(2011) Dheeraj Mohata et al.   Applied Physics Express

Improving the on-current of In0.7Ga0.3As tunneling field-effect-transistors by p++/n+ tunneling junction

(2011) Han Zhao et al.   APPLIED PHYSICS LETTERS

Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current

(2011) K Ganapathi et al.   IEEE ELECTRON DEVICE LETTERS

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

(2011) Guangle Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing

(2010) N. V. Nguyen et al.   APPLIED PHYSICS LETTERS

Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

(2010) Samarth Agarwal et al.   IEEE ELECTRON DEVICE LETTERS

Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

(2010) Lingquan Wang et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate Oxide

(2010) Han Zhao et al.   IEEE ELECTRON DEVICE LETTERS

Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

(2010) Saurabh Mookerjea et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

(2010) J. Knoch et al.   IEEE ELECTRON DEVICE LETTERS

Applying Complementary Trap Characterization Technique to Crystalline $\gamma$-Phase-$\hbox{Al}_{2} \hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and Reliability

(2010) Mohammed B. Zahid et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

(2010) Siyuranga O. Koswatta et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

(2010) Alan C. Seabaugh et al.   PROCEEDINGS OF THE IEEE

Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry

(2010) N.V. Nguyen et al.   THIN SOLID FILMS

Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2

(2009) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

(2009) Mathieu Luisier et al.   IEEE ELECTRON DEVICE LETTERS