Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy
出版年份 2012 全文链接
标题
Tunnel field-effect transistor heterojunction band alignment by internal photoemission spectroscopy
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 100, Issue 10, Pages 102104
出版商
AIP Publishing
发表日期
2012-03-07
DOI
10.1063/1.3692589
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Experimental Staggered-Source and N+ Pocket-Doped Channel III–V Tunnel Field-Effect Transistors and Their Scalabilities
- (2011) Dheeraj Mohata et al. Applied Physics Express
- Improving the on-current of In0.7Ga0.3As tunneling field-effect-transistors by p++/n+ tunneling junction
- (2011) Han Zhao et al. APPLIED PHYSICS LETTERS
- Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current
- (2011) K Ganapathi et al. IEEE ELECTRON DEVICE LETTERS
- Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate
- (2011) Guangle Zhou et al. IEEE ELECTRON DEVICE LETTERS
- Band offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the effects of postdeposition annealing
- (2010) N. V. Nguyen et al. APPLIED PHYSICS LETTERS
- Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors
- (2010) Samarth Agarwal et al. IEEE ELECTRON DEVICE LETTERS
- Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications
- (2010) Lingquan Wang et al. IEEE ELECTRON DEVICE LETTERS
- $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Tunneling Field-Effect Transistors With an $I_{\rm on}$ of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a Subthreshold Swing of 86 mV/dec Using $\hbox{HfO}_{2}$ Gate Oxide
- (2010) Han Zhao et al. IEEE ELECTRON DEVICE LETTERS
- Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET
- (2010) Saurabh Mookerjea et al. IEEE ELECTRON DEVICE LETTERS
- Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs
- (2010) J. Knoch et al. IEEE ELECTRON DEVICE LETTERS
- Applying Complementary Trap Characterization Technique to Crystalline $\gamma$-Phase-$\hbox{Al}_{2} \hbox{O}_{3}$ for Improved Understanding of Nonvolatile Memory Operation and Reliability
- (2010) Mohammed B. Zahid et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors
- (2010) Siyuranga O. Koswatta et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Low-Voltage Tunnel Transistors for Beyond CMOS Logic
- (2010) Alan C. Seabaugh et al. PROCEEDINGS OF THE IEEE
- Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry
- (2010) N.V. Nguyen et al. THIN SOLID FILMS
- Energy barriers at interfaces between (100) InxGa1−xAs (0≤x≤0.53) and atomic-layer deposited Al2O3 and HfO2
- (2009) V. V. Afanas’ev et al. APPLIED PHYSICS LETTERS
- Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors
- (2009) Mathieu Luisier et al. IEEE ELECTRON DEVICE LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started