Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations

In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

(2011) Sang-Jun Choi et al.   ADVANCED MATERIALS

Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications

(2011) Manzar Siddik et al.   APPLIED PHYSICS LETTERS

Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices

(2010)   APPLIED PHYSICS LETTERS

Tuning the Crystallization Temperature of Amorphous Ge[sub 2]Sb[sub 2]Te[sub 5] by O and Si Recoil Implantation

(2010) E. Carria et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

(2010) Herbert Schroeder et al.   JOURNAL OF APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Ion irradiation-induced local structural changes in amorphous Ge2Sb2Te5 thin film

(2008) R. De Bastiani et al.   APPLIED PHYSICS LETTERS

Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch

(2008) Naoki Banno et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES