Article
Chemistry, Physical
June Park, Euyjin Park, Hyun-Yong Yu
Summary: In this study, a thermally stable memristor with nitrogen-doped hafnium oxide as an active layer is proposed, which exhibits normal operation even under high temperature conditions.
APPLIED SURFACE SCIENCE
(2022)
Article
Automation & Control Systems
Yu Wang, Wujun Xie, Haochang Chen, David Day-Uei Li
Summary: This article proposes a weighted histogram calibration method and an automatic calibration architecture to implement high-linearity TDCs in low-cost ARM-based SoCs. The proposed method significantly reduces the nonlinearity introduced by nonuniform bins. The implemented TDC offers good uniformity and resolution.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2022)
Article
Chemistry, Multidisciplinary
Sergei Koveshnikov, Oleg Kononenko, Oleg Soltanovich, Olesya Kapitanova, Maxim Knyazev, Vladimir Volkov, Eugene Yakimov
Summary: Graphene oxide, among various graphene derivatives, is the most studied material due to its reliable and repeatable resistive switching properties. Researchers have identified three operative mechanisms responsible for this resistive switching, including metallic-like filamentary conduction, contact resistance modification, and oxidation/reduction in the bulk of graphene oxide.
Article
Computer Science, Information Systems
G. Cano-Quiveu, P. Ruiz-de-Clavijo-Vazquez, M. J. Bellido, J. Juan-Chico, J. Viejo-Cortes
Summary: This study proposes IRIS, a hardware secure boot solution for integrating IoT devices. IRIS can boot a pre-stored Linux kernel image from removable media and ensures the authenticity, integrity, and confidentiality of the boot process. It offers short boot-up times and has a small hardware footprint when implemented on field programmable gate array chips. Furthermore, IRIS is an open-source solution that can be adapted to multiple architectures and includes a crypto-core for data protection.
INTERNET OF THINGS
(2023)
Article
Engineering, Electrical & Electronic
Chih-Ying Chen, Yu-Hsiu Feng, Hong-Lin Lu, Feng-En Chang, Jui-Yuan Chen
Summary: In this study, an integrated structure called one phase-change memory one resistive random access memory (1P1R) was proposed to suppress the sneak current during stacking. The 1P1R device remained in a high resistance state to suppress the sneak current, and switched to a working state to write/read its state. The feasibility of the 1P1R structure was confirmed through electrical measurement, and the property analysis provided insight into its speculated mechanism. The results demonstrated that the novel 1P1R structure could effectively suppress sneak current, showing potential for 3D IC manufacturing.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Emanuel Carlos, Rita Branquinho, Rodrigo Martins, Asal Kiazadeh, Elvira Fortunato
Summary: Metal oxide resistive switching memories are crucial for the requirements of the Internet of Things, and solution-based devices offer advantages such as high flexibility and low cost. These devices are emergent and promising non-volatile memories for future electronics.
ADVANCED MATERIALS
(2021)
Review
Chemistry, Multidisciplinary
Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Sune, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia B. Gonzalez, Fernando Aguirre, Felix Palumbo, Kaichen Zhu, Juan Bautista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Duenas, Tao Wang, Qiangfei Xia, Sebastian Pazos
Summary: RS devices face challenges in variability and reliability issues, and the current method of endurance evaluation shows high inaccuracy and unreliability. A new method proposed in this article aims to provide a more accurate characterization of endurance in RS devices, which could lead to more reliable literature and accelerate their integration in commercial products.
Review
Chemistry, Multidisciplinary
Xianyue Zhao, Stephan Menzel, Ilia Polian, Heidemarie Schmidt, Nan Du
Summary: This review comprehensively examines the state-of-the-art research on resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. It discusses the fabrication techniques for preparing functional BFO layers, analyzes the lattice systems and crystal types responsible for RS behaviors, and reviews the underlying physical mechanisms and effects influencing RS in BFO-based memristive devices. Furthermore, the review explores the applications of BFO devices, evaluates energy consumption in RS, and discusses potential optimization techniques for memristive devices.
Article
Engineering, Electrical & Electronic
Thales Becker, Xuehua Li, Eduardo Moser, Pedro Alves, Gilson Wirth, Mario Lanza
Summary: In this work, the researchers observed giant random conductance fluctuations in resistive switching (RS) devices based on TiO2, HfO2, and hexagonal boron nitride (h-BN) under reading voltages, which is beneficial for recognizing the device's two-state in applications such as stochastic computing ICs.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Polymer Science
Gregory Soon How Thien, Kah-Yoong Chan, Ab Rahman Marlinda
Summary: Halide perovskites (HPs) are currently being widely used in various applications such as photovoltaics and resistive switching (RS) devices. The properties of high electrical conductivity, tunable bandgap, good stability, and low-cost synthesis and processing make HPs promising as active layers in RS devices. Recent reports have also discussed the use of polymers to improve the RS properties of lead (Pb) and Pb-free HP devices. This review explores the role of polymers in optimizing HP RS devices and successfully investigates their effects on the ON/OFF ratio, retention, and endurance properties.
Review
Chemistry, Physical
Tuo Shi, Rui Wang, Zuheng Wu, Yize Sun, Junjie An, Qi Liu
Summary: Resistive switching devices are emerging devices with advantages of simple structure, low power consumption, high speed, and good scalability, primarily attributed to the formation of conductive filaments. Integration in a crossbar structure allows for further exploration of various applications.
Article
Chemistry, Multidisciplinary
Maria N. Koryazhkina, Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry A. Serov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, Evgeny G. Gryaznov, Elena S. Orlova, Sergey A. Shchanikov, Alexey N. Mikhaylov, Sungjun Kim
Summary: The electrical characteristics and resistive switching properties of memristive devices using silicon oxide and titanium nitride as the insulator and electrode materials have been studied. The as-fabricated devices do not require electroforming, but their resistance state cannot be stored before thermal treatment. After the thermal treatment, the devices exhibit bipolar-type resistive switching with synaptic behavior, where filaments form in the insulator due to the effect of traps. These devices can be easily integrated with traditional analog-digital circuits to implement new-generation hardware neuromorphic systems.
Article
Computer Science, Artificial Intelligence
Alexandro Ortiz, Efrain Mendez, David Balderas, Pedro Ponce, Israel Macias, Arturo Molina
Summary: This study describes the implementation of metaheuristic optimization algorithms in hardware and compares five important algorithms. The results demonstrate the feasibility of NI FPGA hardware and reveal differences in device utilization and execution time among the algorithms.
APPLIED SOFT COMPUTING
(2021)
Article
Nanoscience & Nanotechnology
C. -J. Liu, H. -Y. Lo, A. -Y. Hou, J. -Y. Chen, C. -H. Wang, C. -W. Huang, W. -W. Wu
Summary: One-dimensional metal oxide nanostructured materials have attracted attention for their properties and functionalities. This study investigated the resistive switching mechanism in a single Ta2O5 nanotube, revealing its dynamic behavior in memristive devices. The relationship between crystallinity and electrical properties was also explored.
MATERIALS TODAY NANO
(2022)
Article
Materials Science, Ceramics
Lee Doowon, Bae Dongjoo, Kim Sungho, Hee-Dong Kim
Summary: This study investigates the correlation between the resistive switching characteristics and the traps of Zr3N2-based resistive random-access memory (RRAM) devices. It is found that the resistive switching characteristics are closely related to the nitride trap density in the Zr3N2 films, and controlling the nitride trap density is crucial for achieving a stable resistance state.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Multidisciplinary
Hongyue Jing, Hyeonwoo Yeo, Benzheng Lyu, Junga Ryou, Seunghyuk Choi, Jin-Hong Park, Byoung Hun Lee, Yong-Hoon Kim, Sungjoo Lee
Summary: The paper demonstrates the chemical modification of Ti3C2Tx MXene via diazonium covalent chemistry and the subsequent effects on the electrical properties of MXene. The work function of functionalized MXene can be modulated by adjusting the concentration of the diazonium salt solution, with an adjustable range of around 0.6 eV. The controlled modification of surface groups in Ti3C2Tx may imbue Ti3C2Tx with favorable electronic behaviors, showing prospects for electronic field applications.
Article
Physics, Applied
Yajie Yang, Jinshu Li, Seunghyuk Choi, Sumin Jeon, Jeong Ho Cho, Byoung Hun Lee, Sungjoo Lee
Summary: A high-responsivity PtSe2 photodetector (5x10(4) A/W) was achieved through the photogating effect induced by hole-trapping states attributed to Se vacancies. Additionally, a gate-tunable transition between positive and negative photoconductances was observed under light illumination. Theoretical calculations based on the Boltzmann transport theory were used to explain the carrier transport of PtSe2, taking into account the contributions of charged impurity, acoustic phonon, and polar optical phonon scattering.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Jun-Young Park, Tae Jin Yoo, Ji-Man Yu, Byoung Hun Lee, Yang-Kyu Choi
Summary: This work experimentally confirmed the relationship between passivation gas species and curing characteristics during transistor-level annealing, and it was found that the existence of deuterium in a device was strongly associated with curing behavior.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Cihyun Kim, Tae Jin Yoo, Kyoung Eun Chang, Min Gyu Kwon, Hyeon Jun Hwang, Byoung Hun Lee
Summary: The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 x 10(10) cm . Hz(1/2)W(-1). The responsivity is improved to 1.2 AW(-1) with an interfacial layer from 0.5 AW(-1) of the reference devices. The normalized photo-todark current ratio is improved to 4.3 x 10(7) W-1 at a wavelength of 1550 nm, which is 10-100 times higher than those of other Ge photodetectors.
Article
Chemistry, Multidisciplinary
Tae Jin Yoo, Wan Sik Kim, Kyoung Eun Chang, Cihyun Kim, Min Gyu Kwon, Ji Young Jo, Byoung Hun Lee
Summary: A graphene photodetector decorated with Bi2Te3 nanowires demonstrated high gain and wide bandwidth window. The photoconductive gain was significantly improved compared to a graphene/Bi2Te3 nanoplate junction, and the position of photocurrent generation was investigated. By utilizing low bandgap Bi2Te3 nanowires and a graphene junction, the photoresponsivity was increased effectively.
Article
Engineering, Electrical & Electronic
Ho-In Lee, So-Young Kim, Seung-Mo Kim, Yongsu Lee, Hae-Won Lee, Sung Ho Yu, Hyeon Jun Hwang, Myung Mo Sung, Byoung Hun Lee
Summary: This work investigates the scaling prospect of ZnO stacked nanosheet channel ternary field effect transistor, as well as the impact of scaling geometric parameters on its performance. The results show that compared to other ternary logic devices, this device has lower power consumption and higher noise margin in the intermediate state. The feasibility for stable ternary circuit operation is also confirmed.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Optics
Jaecheol Cho, Sungsam Kang, Byeongha Lee, Jungho Moon, Yong-Sik Lim, Mooseok Jang, Wonshik Choi
Summary: This study presents a method to separately quantify ballistic and multiple-scattered waves, even in the presence of strong multiple scattering interference, and analyze their temporal behavior, laying a foundation for utilizing multiple-scattered waves for deep-tissue imaging.
Article
Chemistry, Multidisciplinary
Asif Ali, So-Young Kim, Muhammad Hussain, Syed Hassan Abbas Jaffery, Ghulam Dastgeer, Sajjad Hussain, Bach Thi Phuong Anh, Jonghwa Eom, Byoung Hun Lee, Jongwan Jung
Summary: The electronic properties of single-layer, CVD-grown graphene were affected by deep ultraviolet (DUV) light irradiation in different radiation environments, leading to p-type or n-type doping. The degree of doping increased with exposure time, with n-type doping in vacuum reaching saturation after 60 minutes. Additionally, p-type doping in air exhibited higher stability, while n-type doping in nitrogen gas was relatively unstable over time.
Article
Nanoscience & Nanotechnology
Cihyun Kim, Tae Jin Yoo, Min Gyu Kwon, Kyoung Eun Chang, Hyeon Jun Hwang, Byoung Hun Lee
Summary: The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region, resulting in significantly improved infrared detection capability.
Article
Optics
Min Gyu Kwon, Cihyun Kim, Kyoung Eun Chang, Tae Jin Yoo, So-Young Kim, Hyeon Jun Hwang, Sanghan Lee, Byoung Hun Lee
Summary: In this paper, we improved the performance of a near-infrared graphene/germanium heterojunction photodetector by doping graphene with p-type chemical, which lowered the Fermi level and increased the Schottky barrier. The responsivity and detectivity were significantly improved, making it valuable for the development of graphene/semiconductor based photodetectors and near-infrared sensors.
Article
Chemistry, Analytical
Myeongseop Kim, Bobae Cho, Hansol Lee, Taeil Yoon, Byeongha Lee
Summary: In this study, a hemispherical resonator gyroscope (HRG) was implemented using a consumer wineglass as the resonator and 3 x 3 optical interferometers as the detectors. The low quality of the off-the-shelf wineglass as a resonator was overcome by the high performance of the optical interferometer. The asymmetries in stiffness and absorption of the resonator were analyzed theoretically and confirmed experimentally. The straightness of the amplitude ratio of two n = 2 fundamental resonant modes of the resonator in a complex plane was proven. By utilizing this straightness and the high performance of the optical interferometer, four real constant parameters characterizing the HRG system were extracted. Experimental results showed that it was possible to measure the Coriolis force at the level of industrial grade using a resonator with an average resonance frequency of 444 Hz and Q value of 1477.2, and achieve a small bias stability of 2.093 degrees/h.
Article
Materials Science, Multidisciplinary
Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Ilgyu Choi, Sang Kyung Lee, Seung Mo Kim, Byoung Hun Lee, Ho-Kyun Ahn, Jong -Won Lim
Summary: AlGaN/GaN MIS-HEMTs fabricated with a recess gate exhibit sensitivity to changes in the polarity of the gate voltage. Under negative gate bias stress, electron detrapping requires overcoming an energy barrier, leading to increased temperature dependence. Degradation occurs primarily at the Al2O3/AlGaN interface rather than in the channel or mobility. During relaxation, the time exponent of V-T shift is relatively low, which may be attributed to further degradation at the broader energy levels of the Al2O3/AlGaN interface.
CURRENT APPLIED PHYSICS
(2022)
Article
Chemistry, Physical
Hyeon Jun Hwang, So-Young Kim, Sang Kyung Lee, Byoung Hun Lee
Summary: This study investigated the performance of a thermoelectric device made of centimeter-scale monolayer graphene. The carrier type and junction profile of the active graphene layer were modified through chemical doping. After device optimization, improvements in carrier concentration of at least 200% and enhancements in power factor of at least 600% were achieved. Under optimal conditions, a maximum Seebeck coefficient of -350 mu V/K and power factor of -14000 mu W/mK^2 were obtained, which are at least three times higher than the best values reported for other graphene-based thermoelectric devices.
Article
Chemistry, Multidisciplinary
Hyeon Jun Hwang, So-Young Kim, Sang Kyung Lee, Byoung Hun Lee
Summary: By modifying the Fermi level of large-area graphene using an external electric field, researchers have experimentally investigated a reconfigurable passive device that can manipulate its resonant frequency by controlling its quantum capacitance value without complicated equipment. When the total capacitance change caused by the gate bias increased to 60% compared to the initial state, a 6% shift in the resonant frequency could be achieved. Although the signal characteristics of the graphene antenna are slightly inferior to conventional metal antennas, simplifying the device structure allows reconfigurable characteristics to be implemented using only the gate bias change.
Article
Engineering, Electrical & Electronic
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee
Summary: Barrier height, trap state, bandgap, and band alignment information of the metal-ZrO2-metal capacitor were extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V characteristics before and after rapid thermal annealing, the origin and transformation of defect states were successfully investigated. The analysis revealed that deep-level defects originating from oxygen vacancies near the top electrode are the cause of leakage current in MIM capacitor, which can be effectively reduced by proper thermal annealing.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
