Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 24, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.2945880
Keywords
-
Categories
Ask authors/readers for more resources
The crystallization kinetics of as-deposited and ion implanted amorphous Ge2Sb2Te5 thin films has been measured by time resolved reflectivity. An enhancement of the crystallization process occurred in the implanted samples. Raman scattering analysis was used to correlate the stability of the amorphous phase to its structure. The variation of the Raman signal after ion irradiation is consistent with a reduction in Ge-Te tetrahedral bonds, characteristic of the Ge coordination in amorphous Ge2Sb2Te5. (C) 2008 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available