Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3622656
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Funding
- National Research Program of the 0.1 Terabit Non-volatile Memory Development Project
- National Research Laboratory (NRL)
- Korea Science and Engineering Foundation (KOSEF)
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We propose a low power, high-performance nanoscale (phi = 150 nm) resistive memory device having a Ge2Sb2Te5/Ti/Pr0.7Ca0.3MnO3 (GST/Ti/PCMO) structure. As a thermoelectric heater and/or thermal barrier, GST accelerates the Ti/PCMO interfacial redox process thermally by enhancing the mobility of oxygen ions and minimizes the loss of local heat. Improvement of the memory performances and voltage-time dilemma issue is achieved by adopting this type of thermally assisted process. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3622656]
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