Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3259649
Keywords
antimony compounds; germanium compounds; nanostructured materials; phase change memories; ternary semiconductors; thermoelectric devices; thermoelectricity
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Funding
- SRC
- Korea Research Foundation [KRF-2005-070-C00041]
- Korea Government MOEHRD Basic Research Fund [KRF-2006-341C000015]
- Korea Institute of Science and Technology Information
- National Research Foundation of Korea [2005-070-C00041] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.
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