Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide

Published 2009 View Full Article

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Title
Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 11, Pages 113504
Publisher
AIP Publishing
Online
2009-09-18
DOI
10.1063/1.3231923
References
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