Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps

Title
Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 6, Pages 063508
Publisher
AIP Publishing
Online
2009-02-12
DOI
10.1063/1.3077016

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