Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide

标题
Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 95, Issue 11, Pages 113504
出版商
AIP Publishing
发表日期
2009-09-18
DOI
10.1063/1.3231923

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