Self-limiting growth of ultrathin Ga2O3for the passivation of Al2O3/InGaAs interfaces

In situ surface pre-treatment study of GaAs and In0.53Ga0.47As

(2012) B. Brennan et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition of Ga2O3 Films Using Trimethylgallium and Ozone

(2012) David J. Comstock et al.   CHEMISTRY OF MATERIALS

Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing

(2012) Wipakorn Jevasuwan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

(2012) Takuya Hoshii et al.   JOURNAL OF APPLIED PHYSICS

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

(2012) Wipakorn Jevasuwan et al.   Materials

Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

(2011) Andrew D. Carter et al.   Applied Physics Express

In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

(2011) M. Milojevic et al.   APPLIED PHYSICS LETTERS

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

(2011) É. O’Connor et al.   JOURNAL OF APPLIED PHYSICS

Is interfacial chemistry correlated to gap states for high-k/III–V interfaces?

(2011) W. Wang et al.   MICROELECTRONIC ENGINEERING

InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS

(2011) M. Hong et al.   MRS BULLETIN

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Scanning tunneling microscopy study of the interfacial bonding structures of Ga2O and In2O/In0.53Ga0.47As(001)

(2010) Jian Shen et al.   MICROELECTRONIC ENGINEERING

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Interface states model for III–V oxide interfaces

(2009) J. Robertson   MICROELECTRONIC ENGINEERING

Surface passivation and implications on high mobility channel performance (Invited Paper)

(2009) C.L. Hinkle et al.   MICROELECTRONIC ENGINEERING

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

(2008) Byungha Shin et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS