Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

Crack-free AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on a 200 mm Si substrate by metal-organic chemical vapor deposition (MOCVD) is presented. As grown epitaxial layers show good surface uniformity throughout the wafer. The AlGaN/GaN HEMT with the gate length of 1.5 mu m exhibits a high drain current density of 856 mA/mm and a transconductance of 153 mS/mm. The 3.8-mu m-thick device demonstrates a high breakdown voltage of 1.1 kV and a low specific on-resistance of 2.3 m Omega cm(2) for the gate-drain spacing of 20 mu m. The figure of merit of our device is calculated as 5.3 x 10(8) V-2 Omega(-1) cm(-2). (C) 2013 The Japan Society of Applied Physics