High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

(2010) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

(2009) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

(2009) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

(2009) S.L. Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

(2009) Domenica Visalli et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

(2008) Yifeng Wu et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

(2008) Kai Cheng et al.   JAPANESE JOURNAL OF APPLIED PHYSICS