Volatile resistive switching in Cu/TaOx/δ-Cu/Pt devices

Switching Characteristics of Antiparallel Resistive Switches

(2012) Tong Liu et al.   IEEE ELECTRON DEVICE LETTERS

Synaptic behaviors of a single metal–oxide–metal resistive device

(2011) Sang-Jun Choi et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

One-dimensional model of the programming kinetics of conductive-bridge memory cells

(2011) John R. Jameson et al.   APPLIED PHYSICS LETTERS

A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

(2011) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

(2009) Qi Liu et al.   APPLIED PHYSICS LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

MEMRISTOR OSCILLATORS

(2009) MAKOTO ITOH et al.   INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS