Complementary Logic with Voltage Zero-Loss and Nano-Watt Power via Configurable MoS2 /WSe2 Gate

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

(2018) Chunsen Liu et al.   Nature Nanotechnology

Large Excitonic Reflectivity of Monolayer MoSe2 Encapsulated in Hexagonal Boron Nitride

(2018) Giovanni Scuri et al.   PHYSICAL REVIEW LETTERS

High Performance Amplifier Element Realization via MoS2 /GaTe Heterostructures

(2018) Xiao Yan et al.   Advanced Science

A Novel Energy Efficient High-Speed 10-Transistor Full Adder Cell Based on Pass Transistor Logic

(2017) Ambika Prasad Shah et al.   Journal of Nanoelectronics and Optoelectronics

WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment

(2017) Chao Li et al.   NANOTECHNOLOGY

Multifunctional high-performance van der Waals heterostructures

(2017) Mingqiang Huang et al.   Nature Nanotechnology

Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor

(2017) Xiao Yan et al.   Small

A microprocessor based on a two-dimensional semiconductor

(2017) Stefan Wachter et al.   Nature Communications

2D transition metal dichalcogenides

(2017) Sajedeh Manzeli et al.   Nature Reviews Materials

Non-Lithographic Fabrication of All-2D α-MoTe2Dual Gate Transistors

(2016) Kyunghee Choi et al.   ADVANCED FUNCTIONAL MATERIALS

Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

(2016) Yongsuk Choi et al.   ADVANCED MATERIALS

Stacked-Layer Heterostructure Films of 2D Thiophene Nanosheets and Graphene for High-Rate All-Solid-State Pseudocapacitors with Enhanced Volumetric Capacitance

(2016) Zhong-Shuai Wu et al.   ADVANCED MATERIALS

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

(2016) Tania Roy et al.   APPLIED PHYSICS LETTERS

Formation and Dynamics of Electron-Irradiation-Induced Defects in Hexagonal Boron Nitride at Elevated Temperatures

(2016) Thang Pham et al.   NANO LETTERS

Synthesis of aligned symmetrical multifaceted monolayer hexagonal boron nitride single crystals on resolidified copper

(2016) Roland Yingjie Tay et al.   Nanoscale

Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus

(2016) A. N. Rudenko et al.   PHYSICAL REVIEW LETTERS

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Symmetric complementary logic inverter using integrated black phosphorus and MoS2transistors

(2016) Yang Su et al.   2D Materials

Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits

(2015) Pyo Jin Jeon et al.   ACS Applied Materials & Interfaces

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

(2015) Atiye Pezeshki et al.   ACS Nano

Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

(2015) Hsiao-Yu Chang et al.   ADVANCED MATERIALS

Semiconducting black phosphorus: synthesis, transport properties and electronic applications

(2015) Han Liu et al.   CHEMICAL SOCIETY REVIEWS

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

(2015) Hennrik Schmidt et al.   CHEMICAL SOCIETY REVIEWS

Low power 18T pass transistor logic ripple carry adder

(2015) Veeraiyah Thangasamy et al.   IEICE Electronics Express

Electronic Transport of Encapsulated Graphene and WSe2 Devices Fabricated by Pick-up of Prepatterned hBN

(2015) Joel I-Jan Wang et al.   NANO LETTERS

Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage

(2015) F. Bonaccorso et al.   SCIENCE

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

(2015) Erfu Liu et al.   Nature Communications

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Black phosphorus field-effect transistors

(2014) Likai Li et al.   Nature Nanotechnology

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

(2014) Rui Cheng et al.   Nature Communications

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

(2012) Ki Kang Kim et al.   ACS Nano

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

(2011) Gwan-Hyoung Lee et al.   APPLIED PHYSICS LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

A high-speed differential CMOS Schmitt trigger with regenerative current feedback and adjustable hysteresis

(2009) Fei Yuan   ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING

Integrated complementary graphene inverter

(2009) Floriano Traversi et al.   APPLIED PHYSICS LETTERS