Article
Chemistry, Multidisciplinary
Bo Wang, Liming Wang, Yichi Zhang, Maolong Yang, Dongdong Lin, Ningning Zhang, Zuimin Jiang, Maliang Liu, Zhangming Zhu, Huiyong Hu
Summary: This paper presents a 2D MoS2/3D Ge junction field-effect transistor with low subthreshold swing and high on/off ratio. The device exhibits bidirectional photoresponse and three controllable current states can be realized by changing the gate voltage and infrared light.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Physical
Ping Li, Xue-Song Zhou, Zhi-Xin Guo
Summary: This study proposes a method to efficiently control 2D magnets with a small electric field in a multiferroic heterostructure. The feasibility of this strategy is demonstrated in the bilayer CrI3/BiFeO3(001) heterostructure using first-principles calculations. The heterostructure exhibits strong magnetoelectric coupling, allowing efficient switching between ferromagnetic and antiferromagnetic states of the bilayer CrI3 by the polarized states of BiFeO3(001).
NPJ COMPUTATIONAL MATERIALS
(2022)
Article
Chemistry, Physical
Fobao Huang, Jianghua Chen, Yiluo Ding, Wei Huang
Summary: The study explores the impact of the piezotronic effect and other effects on the two-dimensional electron gas (2DEG) in third-generation semiconductors. The results demonstrate that stress, induced by piezoelectric polarization, can effectively control the electron concentration of the 2DEG. Furthermore, the piezotronic effect can increase the density of states and enhance the Rashba spin-orbit coupling in wide-gap piezoelectric semiconductors.
Article
Physics, Condensed Matter
Jing Huang, Jun Kang
Summary: Semiconducting graphyne/graphene heterostructure shows excellent electronic properties, suitable for 2D FETs. N-type Ohmic contact with zero Schottky barrier height can be achieved through charge transfer and efficient electron tunneling. The Schottky barrier height can be controlled by applying external electric fields or doping, allowing for contact type transition.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2022)
Article
Engineering, Electrical & Electronic
Jinshui Miao, Chloe Leblanc, Jinjin Wang, Yue Gu, Xiwen Liu, Baokun Song, Huairuo Zhang, Sergiy Krylyuk, Weida Hu, Albert Davydov, Tyson Back, Nicholas Glavin, Deep Jariwala
Summary: Low power consumption is an important requirement in the development of modern electronics. Tunnel field-effect transistors based on two-dimensional materials offer improved electrostatic control and potentially higher on-current densities and on/off ratios.
NATURE ELECTRONICS
(2022)
Article
Chemistry, Physical
Hao-Wei Tu, Che-Chi Shih, Chin-Lung Lin, Meng-Zhe Yu, Jian-Jhong Lai, Ji-Chang Luo, Geng-Li Lin, Wen-Bin Jian, Kenji Watanabe, Takashi Taniguchi, Chenming Hu
Summary: The mobility of MoS2 nanosheets plays a significant role in nanoelectronics applications, with devices categorized into high-mobility and low-mobility based on their temperature-dependent behaviors. The high-mobility devices exhibit increasing mobility with decreasing temperature, showing phonon scattering, metallic states, and low contact resistivity; while the low-mobility devices display decreasing mobility, insulating states, impurity scattering, and high contact resistance, with temperature dependent resistances following Mott's variable range hopping. The observations suggest a wide range of intrinsic disorders in MoS2 nanosheets.
APPLIED SURFACE SCIENCE
(2021)
Article
Multidisciplinary Sciences
Yuan Liu, Xidong Duan, Hyeon-Jin Shin, Seongjun Park, Yu Huang, Xiangfeng Duan
Summary: The article reviews the promise and current status of 2D transistors, emphasizing the potential misestimation or misinterpretation of widely used device parameters. It suggests using more reliable methods to assess the potential of diverse 2D semiconductors and highlights key technical challenges in optimizing the performance of 2D transistors.
Article
Materials Science, Multidisciplinary
Hengze Qu, Shiying Guo, Wenhan Zhou, Zhenhua Wu, Jiang Cao, Zhi Li, Haibo Zeng, Shengli Zhang
Summary: This study proposes a strategy to enhance the inter-band tunneling performance by utilizing anisotropic electronic structures. The sharp energy dispersion in the transport direction and weak transverse energy state can enhance the tunneling probability. Quantum transport simulations demonstrate that in 2D VA-VA TFETs, stronger anisotropic band structures can increase the on-state current and achieve a steep subthreshold slope.
Article
Chemistry, Multidisciplinary
Masatoshi Ito, Tomoko Fujino, Lei Zhang, So Yokomori, Toshiki Higashino, Rie Makiura, Kanokwan Jumtee Takeno, Taisuke Ozaki, Hatsumi Mori
Summary: Researchers synthesized planar alkoxy-substituted nickel bis(dithiolene) analogs with good solubility and crystallinity, which exhibited excellent ambipolar semiconductor performance in air. By addressing the molecular structure issue, they achieved high carrier mobility and large on/off ratio.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2023)
Article
Chemistry, Multidisciplinary
Jovian Delaforce, Masiar Sistani, Roman B. G. Kramer, Minh A. Luong, Nicolas Roch, Walter M. Weber, Martien den Hertog, Eric Robin, Cecile Naud, Alois Lugstein, Olivier Buisson
Summary: Superconductor-semiconductor-superconductor heterostructures with monolithic Al-Ge-Al nanowire featuring high junction transparency Josephson field-effect transistors have been demonstrated in this study to investigate low-temperature transport properties of intrinsic Ge quantum dots, showing tunability of device performance from insulating to supercurrent regimes. This provides a promising architecture for hybrid superconductor-semiconductor devices for the study of Majorana zero modes and components of quantum computing.
ADVANCED MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Ling Tong, Xiaojiao Guo, Zhangfeng Shen, Lihui Zhou, Jingyi Ma, Xinyu Chen, Honglei Chen, Yin Xia, Chuming Sheng, Saifei Gou, Die Wang, Xinyu Wang, Xiangqi Dong, Yuxuan Zhu, Xinzhi Zhang, David Wei Zhang, Sheng Dai, Xi Li, Peng Zhou, Yangang Wang, Wenzhong Bao
Summary: This study developed a novel contact structure with transferred multilayer MoS2, achieving low contact resistivity through in-situ plasma treatment and metal deposition on the edge of the MoS2 channel. Thickness-dependent electrical measurement showed that edge contact is highly effective with thick MoS2, alleviating current-crowding effect. Temperature-dependent transport measurement further confirmed the advantages of this contact structure. Finally, a simplified resistor network model and energy-band diagram were proposed to explain the carrier transport mechanism.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Jian-Min Yan, Jing-Shi Ying, Ming-Yuan Yan, Zhao-Cai Wang, Shuang-Shuang Li, Ting-Wei Chen, Guan-Yin Gao, Fuyou Liao, Hao-Su Luo, Tao Zhang, Yang Chai, Ren-Kui Zheng
Summary: This study demonstrates the construction of 2D FeFETs with efficient control over two-dimensional bismuth layered oxyselenide films, showcasing their optical response characteristics and the potential for constructing new multiresponse and multifunction devices.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Nanoscience & Nanotechnology
Adeel Liaqat, Yiheng Yin, Sabir Hussain, Wen Wen, Juanxia Wu, Yuzheng Guo, Chunhe Dang, Ching-Hwa Ho, Zheng Liu, Peng Yu, Zhihai Cheng, Liming Xie
Summary: As the size of metal oxide semiconductor field-effect transistors (FETs) is scaled down, power dissipation becomes a major challenge. The use of negative capacitance (NC) effect enables a new path to achieve a low sub-threshold swing (SS) below the Boltzmann limit. In this work, a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure has been demonstrated, showing steep slopes switching over a wide range of source-drain current.
Article
Nanoscience & Nanotechnology
Junliang Liu, Wenwu Pan, Han Wang, Zekai Zhang, Songqing Zhang, Guang Yuan, CaiLei Yuan, Yongling Ren, Wen Lei
Summary: This research investigated the origins of hysteresis effect in 2D Bi2Te3 FETs and successfully minimized and eliminated the hysteresis by applying a poly(methyl methacrylate) layer, leading to improved carrier mobility and device performance. The study highlights the significant influence of surface/interface trap states on the electrical properties and device performance of nanostructures, emphasizing the necessity of surface passivation for achieving high device performance.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Zheng Chen, Shuming Duan, Xiaotao Zhang, Wenping Hu
Summary: A dual-function surfactant strategy was used to control the growth of large-area 2D organic semiconductor crystals, resulting in high-quality crystals and improved OFET mobility. This method opens up new possibilities for achieving high-performance OFETs with various high-quality 2D organic semiconductor crystals.
SCIENCE CHINA-CHEMISTRY
(2021)
Article
Nanoscience & Nanotechnology
Hanqi Liu, Kun Ba, Saifei Gou, Yawei Kong, Tong Ye, Jiong Ma, Wenzhong Bao, Peng Zhou, David Wei Zhang, Zhengzong Sun
Summary: Monolayer molybdenum disulfide (MoS2) transferred onto polytetrafluoroethylene (PTFE) substrate exhibited a strong p-doping effect and charge transfer, transforming its electronic structure into that of a hole-rich p-type semiconductor.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Multidisciplinary Sciences
Yin Wang, Hongwei Tang, Yufeng Xie, Xinyu Chen, Shunli Ma, Zhengzong Sun, Qingqing Sun, Lin Chen, Hao Zhu, Jing Wan, Zihan Xu, David Wei Zhang, Peng Zhou, Wenzhong Bao
Summary: The research proposes a new circuit architecture that utilizes MoS2 transistors for efficient in-memory computing, enabling high-capacity MAC operations in a small area. By storing multi-level voltages and combining analog computation, tasks such as image recognition are achieved.
NATURE COMMUNICATIONS
(2021)
Editorial Material
Nanoscience & Nanotechnology
Jianye Fu, Meng Qiu, Wenzhong Bao, Han Zhang
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Jialin Meng, Tianyu Wang, Hao Zhu, Li Ji, Wenzhong Bao, Peng Zhou, Lin Chen, Qing-Qing Sun, David Wei Zhang
Summary: This study demonstrated the fabrication of an artificial retina based on 2D Janus MoSSe, inspired by biological eyes, to simulate visual perception functions. Furthermore, integration of sensing, memory, and neuromorphic computing functions on one device was achieved, inspired by the human brain, ensuring scalability and high efficiency.
Article
Multidisciplinary Sciences
Xinyu Chen, Yufeng Xie, Yaochen Sheng, Hongwei Tang, Zeming Wang, Yu Wang, Yin Wang, Fuyou Liao, Jingyi Ma, Xiaojiao Guo, Ling Tong, Hanqi Liu, Hao Liu, Tianxiang Wu, Jiaxin Cao, Sitong Bu, Hui Shen, Fuyu Bai, Daming Huang, Jianan Deng, Antoine Riaud, Zihan Xu, Chenjian Wu, Shiwei Xing, Ye Lu, Shunli Ma, Zhengzong Sun, Zhongyin Xue, Zengfeng Di, Xiao Gong, David Wei Zhang, Peng Zhou, Jing Wan, Wenzhong Bao
Summary: The authors demonstrate the application of machine learning to optimize the fabrication process of wafer-scale 2D semiconductors, resulting in the fabrication of digital, analog, and optoelectrical circuits. By utilizing machine learning algorithms to evaluate key process parameters impacting device performance, they were able to overcome challenges and validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials.
NATURE COMMUNICATIONS
(2021)
Article
Multidisciplinary Sciences
Shunli Ma, Tianxiang Wu, Xinyu Chen, Yin Wang, Hongwei Tang, Yuting Yao, Yan Wang, Ziyang Zhu, Jianan Deng, Jing Wan, Ye Lu, Zhengzong Sun, Zihan Xu, Antoine Riaud, Chenjian Wu, David Wei Zhang, Yang Chai, Peng Zhou, Junyan Ren, Wenzhong Bao
Summary: Research has shown that a MoS2 artificial neural network (ANN) chip with multiply-and-accumulate (MAC), memory, and activation function circuits has been successfully developed. Based on the design and optimization of analog ANN circuits, a tactile digit recognition application was demonstrated. This work not only showcases the potential of 2D semiconductors in wafer-scale integrated circuits, but also opens up possibilities for their future application in AI computation.
Article
Materials Science, Multidisciplinary
Jingyi Ma, Xinyu Chen, Yaochen Sheng, Ling Tong, Xiaojiao Guo, Minxing Zhang, Chen Luo, Lingyi Zong, Yin Xia, Chuming Sheng, Yin Wang, Saifei Gou, Xinyu Wang, Xing Wu, Peng Zhou, David Wei Zhang, Chenjian Wu, Wenzhong Bao
Summary: This study investigates a doping-free strategy using top-gated MoS2 field-effect transistors with various metal gates. Different metals with different work functions provide a convenient tuning knob for controlling the threshold voltage of the MoS2 FETs. By achieving matched electrical properties for load and driver transistors in an inverter circuit, wafer-scale MoS2 inverter arrays with optimized switching threshold voltage and voltage gain were successfully demonstrated.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2022)
Article
Materials Science, Multidisciplinary
Xinyu Chen, Honglei Chen, Yangye Sun, Simeng Zhang, Yin Xia, David Wei Zhang, Peng Zhou, Wenwu Li, Zhengzong Sun, Wenzhong Bao
Summary: The fabrication and characterization of wafer-scale heterostructure arrays composed of multilayer 2H-MoTe2 and single-layer 2H-MoS2 are demonstrated. The p-MoTe2/n-MoS2 heterostructure devices exhibit an excellent gate-tunable PN diode behavior and complementary inverters.
Article
Nanoscience & Nanotechnology
Dong-Hui Zhao, Xiao-Jiao Guo, Ling Tong, Tian-Yu Wang, Zheng-Hao Gu, Tian-Bao Zhang, Hao Zhu, Wen-Zhong Bao, Lin Chen, Li Ji, Qing-Qing Sun, David Wei Zhang
Summary: In this study, large-scale, continuous, and uniform multilayer MoS2 nanosheets were grown by atomic layer deposition, and high-quality MoS2 nanosheets were obtained through large-area peeling and transfer. The MoS2 photodetectors fabricated from these materials exhibited excellent performance in terms of light response, wavelength range, and array structure.
ACS APPLIED NANO MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Jiajun Chen, Yabing Shan, Jing Chen, Chen Chen, Huishan Wang, Jinkun Han, Xiaofei Yue, Mingsheng Xu, Haomin Wang, Wenzhong Bao, Laigui Hu, Ran Liu, Zhi-Jun Qiu, Chunxiao Cong
Summary: In this study, a five-particle positively charged biexciton in monolayer WSe2 is observed by achieving a high exciton density in the GaSe/WSe2 heterostructure with a type-I band alignment. The nature of this biexciton is confirmed through various photoluminescence measurements, and the mechanism of its formation is explained. The influence of charge transfer on the excitonic properties in the type-I band heterostructure is different from that in most TMDCs with type-II band alignments.
ACS APPLIED NANO MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Chuming Sheng, Xiangqi Dong, Yuxuan Zhu, Xinyu Wang, Xinyu Chen, Yin Xia, Zihan Xu, Peng Zhou, Jing Wan, Wenzhong Bao
Summary: The thin nature and exceptional electrical properties of 2D materials have attracted significant interest in circuit applications. Researchers have developed circuits based on wafer-level fabrication and monolithic integration in the laboratory. This review discusses the existing research on process integration, selection of suitable 2D materials, and recent circuit applications, highlighting their potential to compete with and outperform conventional devices.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Physical
Yin Xia, Xinyu Chen, Jinchen Wei, Shuiyuan Wang, Shiyou Chen, Simin Wu, Minbiao Ji, Zhengzong Sun, Zihan Xu, Wenzhong Bao, Peng Zhou
Summary: This study reports an improved chemical vapor deposition synthesis method for growing large-area high-quality 2D semiconductor films with fast and non-toxic growth, which has the potential to reduce manufacturing costs.
Proceedings Paper
Engineering, Electrical & Electronic
Xinyu Chen, Yangye Sun, Ling Tong, Simeng Zhang, Xiaoxi Li, Jingyi Ma, Xiaojiao Guo, Minxing Zhang, Zhengzong Sun, Wenzhong Bao
Summary: This work demonstrates the fabrication and characterization of large-area van der Waals heterostructure array composed of CVD grown 2H-MoTe2 and 2H-MoS2, showing excellent rectifier properties. The study also investigates the transfer characteristics of FETs, achieving homogeneity and high device performance, which advances the application of 2D materials in electronics.
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Jingyi Ma, Ling Tong, Xiaojiao Guo, Xinyu Chen, Minxing Zhang, Chenjian Wu, Wenzhong Bao
Summary: The electrical properties of MoS2 transistors have been manipulated using metal gates with different work functions to modulate the threshold voltage, which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages and the obtained voltage gain is over 35.
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)
(2021)
Article
Materials Science, Multidisciplinary
Tian-Yu Wang, Jia-Lin Meng, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, Wen-Zhong Bao, David Wei Zhang
Summary: This paper explores a 3D flexible memristors network fabricated via low-temperature atomic layer deposition, demonstrating its potential for high-density storage and neuromorphic computing. The network exhibits typical bipolar switching characteristics and multibit storage capability, enhancing storage density. The study indicates the significant potential of the 3D flexible memristors network in high-performance, high-density, and reliable wearable neuromorphic computing systems.
