Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

(2015) Amritesh Rai et al.   NANO LETTERS

Radio Frequency Transistors and Circuits Based on CVD MoS2

(2015) Atresh Sanne et al.   NANO LETTERS

Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene

(2015) Matin Amani et al.   NANOTECHNOLOGY

Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate

(2015) Liang-Yu Su et al.   SOLID-STATE ELECTRONICS

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors

(2014) Matin Amani et al.   APPLIED PHYSICS LETTERS

On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals

(2014) Hsiao-Yu Chang et al.   APPLIED PHYSICS LETTERS

Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition

(2014) Hennrik Schmidt et al.   NANO LETTERS

MoS2 Transistors Operating at Gigahertz Frequencies

(2014) Daria Krasnozhon et al.   NANO LETTERS

Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

(2014) Lili Yu et al.   NANO LETTERS

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

(2014) Rui Cheng et al.   Nature Communications

Two-dimensional flexible nanoelectronics

(2014) Deji Akinwande et al.   Nature Communications

Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

(2014) Rajesh Kappera et al.   APL Materials

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate

(2013) Giovanni A. Salvatore et al.   ACS Nano

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

(2013) Jongho Lee et al.   ACS Nano

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

Inductively heated synthesized graphene with record transistor mobility on oxidized silicon substrates at room temperature

(2013) Li Tao et al.   APPLIED PHYSICS LETTERS

Velocity saturation in few-layer MoS2 transistor

(2013) Gianluca Fiori et al.   APPLIED PHYSICS LETTERS

Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors

(2013) Kun-Ming Chen et al.   IEEE ELECTRON DEVICE LETTERS

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

(2013) Han Liu et al.   NANO LETTERS

Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2

(2013) C. Rice et al.   PHYSICAL REVIEW B

Graphene Transistors: Status, Prospects, and Problems

(2013) Frank Schwierz   PROCEEDINGS OF THE IEEE

Fast flexible electronics with strained silicon nanomembranes

(2013) Han Zhou et al.   Scientific Reports

Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency

(2012) M. E. Ramón et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates

(2012) Nicholas Petrone et al.   NANO LETTERS

Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene

(2012) Nicholas Petrone et al.   NANO LETTERS

Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

(2012) Chuan Wang et al.   NANO LETTERS

Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

(2012) Jiang Pu et al.   NANO LETTERS

Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics

(2011) Changjoon Yoon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

(2010) Y.-M. Lin et al.   SCIENCE