Characteristics of a GaN-Based Light-Emitting Diode With an Inserted p-GaN/i-InGaN Superlattice Structure

Published 2010 View Full Article

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Title
Characteristics of a GaN-Based Light-Emitting Diode With an Inserted p-GaN/i-InGaN Superlattice Structure
Authors
Keywords
-
Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 46, Issue 4, Pages 492-498
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-02-18
DOI
10.1109/jqe.2009.2037337

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