Research on R-Plane Sapphire Substrate CMP Removal Rate Based on a New-Type Alkaline Slurry

Characterization of nonpolar a -plane GaN epi-layers grown on high-density patterned r -plane sapphire substrates

(2018) Daiki Jinno et al.   JOURNAL OF CRYSTAL GROWTH

Characterization and optimization of sputtered AlN buffer layer on r -plane sapphire substrate to improve the crystalline quality of nonpolar a -plane GaN

(2017) Daiki Jinno et al.   JOURNAL OF CRYSTAL GROWTH

Dependence of material removal on crystal orientation of sapphire under cross scratching

(2017) Jinhu Wang et al.   JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

CMP behavior of alumina/metatitanic acid core–shell abrasives on sapphire substrates

(2017) Xin Wang et al.   PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY

Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S 2 O 8 2 − -Fe 2+ based slurry

(2017) Xiaolei Shi et al.   TRIBOLOGY INTERNATIONAL

Effect of a pH Regulator on Sapphire Substrate CMP

(2017) Jianchao Wang et al.   ECS Journal of Solid State Science and Technology

Role of a New Type Chelating Agent in Chemical Mechanical Polishing of R-Plane Sapphire Substrate

(2017) Xin Zhao et al.   ECS Journal of Solid State Science and Technology

Study on planarization machining of sapphire wafer with soft-hard mixed abrasive through mechanical chemical polishing

(2016) Yongchao Xu et al.   APPLIED SURFACE SCIENCE

Effect of surfactant and electrolyte on surface modification of c-plane GaN substrate using chemical mechanical planarization (CMP) process

(2016) Khushnuma Asghar et al.   COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS

Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition

(2016) Weijia Yang et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Study on the processing characteristics of SiC and sapphire substrates polished by semi-fixed and fixed abrasive tools

(2016) Qiufa Luo et al.   TRIBOLOGY INTERNATIONAL

A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition

(2016) Wenliang Wang et al.   VACUUM

Fe-Nx/C assisted chemical–mechanical polishing for improving the removal rate of sapphire

(2015) Li Xu et al.   APPLIED SURFACE SCIENCE

Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

(2015) Shengjun Zhou et al.   APPLIED SURFACE SCIENCE

Effect of concentration and molecular weight of polyethylenimine on zeta potential, isoelectric point of nanocrystalline silicon carbide in aqueous and ethanol medium

(2015) Prasenjit Barick et al.   CERAMICS INTERNATIONAL

Adsorption of silica nanoparticles onto calcite: Equilibrium, kinetic, thermodynamic and DLVO analysis

(2015) A. Dehghan Monfared et al.   CHEMICAL ENGINEERING JOURNAL

Atmospheric pressure plasma enabled polishing of single crystal sapphire

(2015) Ashraf F. Bastawros et al.   CIRP ANNALS-MANUFACTURING TECHNOLOGY

The Research of Reactivity between Nano-abrasives and Sapphire during Polishing Process

(2015) Yongchao Xu et al.   INTEGRATED FERROELECTRICS

A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing

(2015) Xiaolei Shi et al.   SURFACE & COATINGS TECHNOLOGY

Comparison between sapphire lapping processes using 2-body and 3-body modes as a function of diamond abrasive size

(2015) Hyuk-Min Kim et al.   WEAR

Pressure Distribution Control on Surface Conformable Polishing in Chemical Mechanical Planarization

(2015) T. Fujita et al.   ECS Journal of Solid State Science and Technology

The Effect of pH on Sapphire Chemical Mechanical Polishing

(2015) W. Yan et al.   ECS Journal of Solid State Science and Technology

The influence of abrasive size on high-pressure chemical mechanical polishing of sapphire wafer

(2015) Chuljin Park et al.   International Journal of Precision Engineering and Manufacturing-Green Technology

Mechanism of the interaction between Al2O3 and SiO2 during the chemical-mechanical polishing of sapphire with silicon dioxide

(2012) E. A. Vovk et al.   Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques