Role of a New Type Chelating Agent in Chemical Mechanical Polishing of R-Plane Sapphire Substrate
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Role of a New Type Chelating Agent in Chemical Mechanical Polishing of R-Plane Sapphire Substrate
Authors
Keywords
-
Journal
ECS Journal of Solid State Science and Technology
Volume 6, Issue 9, Pages P618-P625
Publisher
The Electrochemical Society
Online
2017-08-23
DOI
10.1149/2.0201709jss
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Study on planarization machining of sapphire wafer with soft-hard mixed abrasive through mechanical chemical polishing
- (2016) Yongchao Xu et al. APPLIED SURFACE SCIENCE
- A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition
- (2016) Wenliang Wang et al. VACUUM
- Fe-Nx/C assisted chemical–mechanical polishing for improving the removal rate of sapphire
- (2015) Li Xu et al. APPLIED SURFACE SCIENCE
- Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer
- (2015) Shengjun Zhou et al. APPLIED SURFACE SCIENCE
- The Research of Reactivity between Nano-abrasives and Sapphire during Polishing Process
- (2015) Yongchao Xu et al. INTEGRATED FERROELECTRICS
- AFM and XPS studies on material removal mechanism of sapphire wafer during chemical mechanical polishing (CMP)
- (2015) Yan Zhou et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing
- (2015) Xiaolei Shi et al. SURFACE & COATINGS TECHNOLOGY
- Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers
- (2015) Yan Zhou et al. TRIBOLOGY INTERNATIONAL
- The Effect of pH on Sapphire Chemical Mechanical Polishing
- (2015) W. Yan et al. ECS Journal of Solid State Science and Technology
- The influence of abrasive size on high-pressure chemical mechanical polishing of sapphire wafer
- (2015) Chuljin Park et al. International Journal of Precision Engineering and Manufacturing-Green Technology
- Surface Planarization of GaN-on-Sapphire Template by Chemical Mechanical Polishing for Subsequent GaN Homoepitaxy
- (2014) Hideo Aida et al. ECS Journal of Solid State Science and Technology
- Low temperature wet etching to reveal sub-surface damage in sapphire substrates
- (2013) Purushottam Kumar et al. APPLIED SURFACE SCIENCE
- Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials
- (2012) Hideo Aida et al. CURRENT APPLIED PHYSICS
- Mechanism of the interaction between Al2O3 and SiO2 during the chemical-mechanical polishing of sapphire with silicon dioxide
- (2012) E. A. Vovk et al. Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques
- Aggressive Diamond Characterization and Wear Analysis during Chemical Mechanical Planarization
- (2012) Changhong Wu et al. ECS Journal of Solid State Science and Technology
- Controlling the Galvanic Corrosion of Copper during Chemical Mechanical Planarization of Ruthenium Barrier Films
- (2011) B. C. Peethala et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started