期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 7, 期 5, 页码 P260-P265出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0221805jss
关键词
-
资金
- Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST(MISiS) [K2-2014-055]
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2017R1A2B3006141]
- DTRA [HDTRA1-17-1-0011]
Bulk, non-polar M-GaN grown by the Ammonothermal method was studied using dark current versus temperature measurements, photocurrent spectra, photoinduced current transient spectroscopy (PICTS), high temperature current-voltage (I-V), and low-frequency capacitance-voltage (C-V). These measurements show the samples are semi-insulating p-type, with the Fermi level pinned near E-v + 0.9 eV. The concentration of uncompensated acceptors pinning the Fermi level is low, similar to 10(14) cm(-3) , while the deep trap spectra are dominated by hole traps with ionization energies close to 0.7 eV, 0.9 eV, and 1.2 eV. The former determine the temperature dependence of photocurrent, while the 0.9 eV defects are the ones pinning the Fermi level. The excellent structural properties and high photosensitivity of the non-polar ammono-grown GaN indicate they may have applications as for radiation detectors and as substrates for nonpolar AlGaN/GaN enhancement mode high electron mobility transistors. (C) 2018 The Electrochemical Society.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据