Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy

Fine structure of the red luminescence band in undoped GaN

(2014) M. A. Reshchikov et al.   APPLIED PHYSICS LETTERS

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

(2014) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

(2013) Alexander Usikov et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nearly 4-Inch-Diameter Free-Standing GaN Wafer Fabricated by Hydride Vapor Phase Epitaxy with Pit-Inducing Buffer Layer

(2013) Tadashige Sato et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes

(2013) D. O. Demchenko et al.   PHYSICAL REVIEW LETTERS

Gallium Nitride Crystals Grown by Hydride Vapor Phase Epitaxy with Dislocation Reduction Mechanism

(2013) Akira Usui   ECS Journal of Solid State Science and Technology

Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

(2012) K. Yamane et al.   JOURNAL OF CRYSTAL GROWTH

Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth

(2011) A. Y. Polyakov et al.   JOURNAL OF APPLIED PHYSICS

Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films

(2011) In-Hwan Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

(2011) Kenji Fujito et al.   MRS BULLETIN

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Bulk GaN crystals grown by HVPE

(2009) Kenji Fujito et al.   JOURNAL OF CRYSTAL GROWTH

Identification of the gallium vacancy–oxygen pair defect in GaN

(2009) N. T. Son et al.   PHYSICAL REVIEW B

n-InGaN∕p-GaN single heterostructure light emitting diode with p-side down

(2008) M. L. Reed et al.   APPLIED PHYSICS LETTERS

Preparation of 3 inch freestanding GaN substrates by hydride vapor phase epitaxy with void-assisted separation

(2008) T. Yoshida et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE