Article
Optics
E. S. Efimenko, N. A. Abramovsky, M. I. Bakunov
Summary: Contrary to common belief, the generation of free carriers can have a positive impact on Cherenkov-type terahertz emission from ultrashort laser pulses by broadening the radiation bandwidth. This is achieved through the acceleration of optically generated carriers by rectified electric fields, resulting in a surge current and broadened emission. Specific results are provided for GaP pumped at a 1.7-μm wavelength.
Article
Engineering, Electrical & Electronic
Sadeq Bani Melhem, Hina Tabassum
Summary: This paper presents a comprehensive framework for analyzing the performance of non-orthogonal multiple access (NOMA) in single-carrier and multi-carrier terahertz (THz) networks, including novel user pairing schemes, outage probability expressions, and MGF-based analysis methods.
IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY
(2022)
Article
Nanoscience & Nanotechnology
Y. Moon, H. Lee, J. Lim, G. Lee, J. Kim, H. Han
Summary: In this work, a quantitative analysis model based on reference-free self-calibration is proposed for the analysis of scattered fields and approach curves on a dielectric substrate in terahertz scattering-type scanning near-field optical microscopy. The model is compared with experimental data and numerical analysis, showing good agreement. It is used to extract the effective tip radius and substrate relative permittivity. The results demonstrate the feasibility of using the model for accurate measurement of geometric and optical parameters in a tip-based THz scattering-type scanning near-field optical microscope.
Article
Biotechnology & Applied Microbiology
Amit P. Jathoul, Bruce R. Branchini, James C. Anderson, James A. H. Murray
Summary: It has been discovered that the wavelength range of beetle bioluminescence can be expanded using a single synthetic substrate, iLH2, and different luciferases can emit various colors from visible green to near-infrared, including in human cells. This finding is significant for understanding the color tuning mechanism of beetle luciferases.
FRONTIERS IN BIOENGINEERING AND BIOTECHNOLOGY
(2022)
Article
Physics, Applied
Takeyoshi Onuma, Wataru Kosaka, Kanta Kudo, Yuichi Ota, Tomohiro Yamaguchi, Kentaro Kaneko, Shizuo Fujita, Tohru Honda
Summary: The temperature dependencies of optical reflectance and cathodoluminescence spectra in MgO single crystal were observed using a custom-built vacuum ultraviolet spectroscopic system. The results showed that the bound exciton emission dominates the near-band edge emission, with free exciton emission observed as a shoulder at 300 K. These findings confirm the strong excitonic nature and potential of MgO-based material system for an active element in VUV light emitter.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Ye Luo, Chunlei Sun, Maoliang Wei, Hui Ma, Yingchun Wu, Zequn Chen, Hao Dai, Jialing Jian, Boshu Sun, Chuyu Zhong, Junying Li, Kathleen A. Richardson, Hongtao Lin, Lan Li
Summary: Photonic mechanical sensors offer advantages over electronic counterparts, but existing flexible photonics strategies face challenges. To address these, a waveguide-integrated flexible mechanical sensor based on photonic crystal microcavities is proposed, with exceptional performance and potential applications.
Article
Optics
Gaurav Varshney, Ravi Raj Gupta, Ajay K. Sharma
Summary: An ultrathin metal-free terahertz absorber is designed and analyzed, which utilizes a rectangular graphite resonator structure. By carving slots in the graphite resonator, the magnetic resonance is converted into electric resonance, achieving near-perfect broadband absorption in the 7.28-11.21 THz frequency range. The absorber shows high absorption efficiency and polarization insensitivity.
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
(2023)
Article
Physics, Applied
P. Quach, A. Jollivet, A. Babichev, N. Isac, M. Morassi, A. Lemaitre, P. A. Yunin, E. Frayssinet, P. de Mierry, M. Jeannin, A. Bousseksou, R. Colombelli, M. Tchernycheva, Y. Cordier, F. H. Julien
Summary: We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The detector exhibited a peak photocurrent at 5.7 THz with a responsivity of 0.1 mA/W at 10 K. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relied on polar GaN/AlGaN step quantum wells.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Ankit Udai, Anthony Aiello, Tarni Aggarwal, Dipankar Saha, Pallab Bhattacharya
Summary: This study investigated the femtosecond carrier and photon dynamics in self-organized In0.27Ga0.73N/GaN QDs grown by molecular beam epitaxy. The unique phenomenon in the dynamics is attributed to the contrast in carrier density caused by the different effective masses of carriers.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Nanoscience & Nanotechnology
Changyi Pan, Ziwei Yin, Hao Mou, Tingting Kang, Huiyong Deng, Huizhen Wu, Ning Dai
Summary: The field dependence of the photoresponse in BIB detectors was demonstrated to have a gain operation region between the saturation voltage of the photocurrent and the breakdown voltage of the dark current, with the photoconduction gain being several orders of magnitude larger in this region. By considering field-assisted thermal ionization and photon-assisted impact ionization processes, the gain operation mode can be well explained, allowing Ge:B BIB detectors to detect objects with temperatures as low as 10 K. Providing a theoretical basis for optimizing BIB detectors can further improve their detection performance.
Article
Optics
Ruei-Lien Sun, Hsin-Han Lai, Zih-Chun Su, Yao-Han Dong, Bo-Heng Chen, Deepali Sinha, Hong-Jhang Syu, Ching-Fuh Lin
Summary: Recent advances in plasmonic absorption devices have provided a new approach to extend the range of silicon light detection by exploiting the Schottky interface energy barrier. Internal photoemission is the primary emission mechanism, but we have discovered that carriers with energy lower than the Schottky barrier can generate electrical responses through the photothermal effect. We investigated photoelectric and photothermal responses on a NiSi thin film Schottky photodetector, considering factors such as temperature, applied bias, incident power, and wavelength regime.
OPTICS AND LASER TECHNOLOGY
(2023)
Article
Optics
Gustavo de O. Luiz, Caique C. Rodrigues, Thiago P. Mayer Alegre, Gustavo S. Wiederhecker
Summary: Recent exploration of oscillator arrays has revealed their potential in accessing a wide range of physical phenomena, from quantum dynamics to optimization problems. Spontaneous oscillations arise in these arrays due to imbalance between gain and loss. Coupling between arrays leads to interesting collective behaviors such as synchronized oscillations and phase states. One particular photonic oscillator, based on silicon thermal free-carriers, shows high compliance to external excitation and can achieve synchronization up to the 16th harmonic.
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
(2023)
Article
Physics, Applied
Takeyoshi Onuma, Kohei Sasaki, Tomohiro Yamaguchi, Tohru Honda, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki
Summary: The study investigated polarized infrared reflectance spectra from beta-Ga2O3 (001) unintentionally doped and Sn-doped substrates using the Drude-Lorentz model. The results successfully reproduced the spectra of pure transverse optical phonons and determined the free-carrier concentrations and carrier mobilities in agreement with Hall-effect measurements. Additionally, the study determined the film thickness for the homoepitaxial layer, ensuring the validity of the simplified optical model analyses for arbitrary surface orientations.
APPLIED PHYSICS LETTERS
(2021)
Article
Optics
Mulong Liu, Wenmi Shi, Qiyuan Sun, Huimin Huang, Zhizhou Lu, Yuanyuan Wang, Yanan Cai, Chang Wang, Yao Li, Wei Zhao
Summary: In this study, a novel mechanism for dark pulse excitation in normal dispersion microresonators utilizing free carrier dispersion and absorption effects due to multi-photon absorption is theoretically demonstrated. Dark pulses can be generated in the presence or absence of external reverse bias to control the lifetime of free carriers, in both three- and four-photon absorption regimes. The direct generation of dark pulses has been proven feasible with a fixed frequency laser, along with an investigation into the temporal and spectral evolution dynamics of dark pulses.
Article
Energy & Fuels
Boxu Shen, Yuanhao Wang, Lin Lu, Hongxing Yang
Summary: This study investigates the effects of F doping on the optical properties of CsxWO3 nanocrystals for the development of spectrally selective coatings for energy-efficient windows. It is found that F doping enhances the absorption performance and free carrier density of the nanocrystals, resulting in improved spectral selectivity of the coating.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2022)
Article
Physics, Applied
M. A. Reshchikov, D. O. Demchenko, D. Ye, O. Andrieiev, M. Vorobiov, K. Grabianska, M. Zajac, P. Nita, M. Iwinska, M. Bockowski, B. McEwen, F. Shahedipour-Sandvik
Summary: Ammonothermal GaN samples were annealed at various temperatures under different N-2 pressure conditions, resulting in the observation of YL2 band and two new PL bands. The origin of YL2 band is attributed to V-Ga-3H(i) complex, while the RL4 band is originated from V-Ga-3O(N) complex.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Joachim Piprek, G. Muziol, M. Siekacz, C. Skierbiszewski
Summary: Self-consistent numerical simulations, in good agreement with measurements, are used to analyze the internal device physics, performance limitations, and optimization options of a unique laser design with multiple active regions separated by tunnel junctions and wide InGaN quantum wells. The wide InGaN quantum wells are found to perfectly screen the strong built-in polarization field, contrary to common assumptions, while optical gain is achieved through higher quantum levels. However, the laser performance is strongly limited by internal absorption, low p-cladding conductivity, and self-heating.
OPTICAL AND QUANTUM ELECTRONICS
(2022)
Article
Optics
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, Mateusz Hajdel, Marcin Siekacz, Anna Feduniewicz-Zmuda, Krzesimir Nowakowski-Szkudlarek, Pawel Wolny, Mikolaj Zak, Henryk Turski, Czeslaw Skierbiszewski
Summary: We demonstrate electrically pumped III-nitride edge-emitting laser diodes with nanoporous bottom cladding. The design of the devices with porous bottom cladding was optimized through theoretical modeling and calculations, allowing for desired optical mode confinement and reduced light leakage risk. This demonstration opens up new possibilities for III-nitride laser diode fabrication.
Article
Chemistry, Physical
Mateusz Hajdel, Mikolaj Chlipala, Marcin Siekacz, Henryk Turski, Pawel Wolny, Krzesimir Nowakowski-Szkudlarek, Anna Feduniewicz-Zmuda, Czeslaw Skierbiszewski, Grzegorz Muziol
Summary: The design of the active region is crucial for III-nitride based LEDs due to carrier separation caused by built-in polarization. In this study, radiative transitions in InGaN-based LEDs with different quantum well thicknesses were investigated. The results showed that the thickness of the quantum well influenced the emission spectra, with thicker quantum wells exhibiting stable emission. The variation in emission spectra was attributed to differences in carrier density and the magnitude of built-in field screening. Excited states played a significant role in carrier recombination, except for the thinnest quantum well.
Article
Physics, Applied
Mikolaj Chlipala, Henryk Turski, Mikolaj Zak, Grzegorz Muziol, Marcin Siekacz, Krzesimir Nowakowski-Szkudlarek, Natalia Fiuczek, Anna Feduniewicz-Zmuda, Julita Smalc-Koziorowska, Czeslaw Skierbiszewski
Summary: In this study, a novel GaN-based blue LED construction utilizing bottom tunnel junction (TJ) was presented, achieving high luminous efficiency and low resistivity at high current. The device showed promising performance with a low LED turn-on voltage and differential resistivity, maintaining high crystal quality and smooth morphology for potential integration. The p-up reference LED exhibited lower resistivity at high current but had lower luminous efficiency compared to bottom TJ LEDs.
APPLIED PHYSICS LETTERS
(2022)
Article
Optics
J. Slawinska, G. Muziol, M. Siekacz, H. Turski, M. Hajdel, M. Zak, A. Feduniewicz-Zmuda, G. Staszczak, C. Skierbiszewski
Summary: We report on III-nitride-based micro-light-emitting diodes (μLEDs) operating at a wavelength of 450 nm with diameters as small as 2μm. Devices with a standard LED structure followed by a tunnel junction were grown using plasma-assisted molecular beam epitaxy. The emission size of μLEDs was controlled by shallow He implantation of the tunnel junction region. The observed shift of current density for the maximum external quantum efficiency with varying μLED diameter suggests a change in the lateral carrier diffusion in InGaN quantum wells.
Article
Engineering, Electrical & Electronic
L. Konczewicz, E. Litwin-Staszewska, M. Zajac, H. Turski, M. Bockowski, D. Schiavon, M. Chlipala, M. Iwinska, P. Nita, S. Juillaguet, S. Contreras
Summary: This paper presents a comparative study of electron transport phenomena in heavily doped n-type gallium nitride above the Mott transition with silicon and germanium. The samples were grown using molecular beam epitaxy, metal-organic vapor phase epitaxy, and halide vapor phase epitaxy. The temperature dependence of resistivity and Hall Effect was measured from 10 K to 650 K. The study of the electrical transport properties at sub-room temperatures provides valuable insights into extrinsic material properties and scattering mechanisms. The limitations of the applied models are also discussed.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Chemistry, Physical
Mikolaj Amilusik, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki, Michal Bockowski
Summary: The co-doping of manganese and carbon in gallium nitride crystals grown by halide vapor phase epitaxy was investigated in terms of their structural, optical, and electrical properties. The results showed the significant roles of manganese and carbon in the co-doped gallium nitride crystals.
Article
Materials Science, Multidisciplinary
Natalia Fiuczek, Marta Sawicka, Anna Feduniewicz-Zmuda, Marcin Siekacz, Mikolaj Zak, Krzesimir Nowakowski-Szkudlarek, Grzegorz Muziol, Pawel Wolny, John J. Kelly, Czeslaw Skierbiszewski
Summary: This study demonstrates the electrochemical etching (ECE) of p-type GaN under constant bias without an external light source for the first time. By using a tunnel junction (TJ) as a cap, stable and controllable hole injection to the p-type semiconductor is achieved. The results provide a method for controllable ECE of p-type GaN using TJ for efficient hole injection.
Article
Physics, Applied
Qiang Liu, Marcin Zajac, Malgorzata Iwinska, Shuai Wang, Wenrong Zhuang, Michal Bockowski, Xinqiang Wang
Summary: Ethylene is an excellent carbon dopant source for the growth of semi-insulating GaN crystals by halide vapor phase epitaxy, with a doping efficiency much higher than methane. By ethylene doping, a record highest resistivity can be achieved.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Leszek Konczewicz, Malgorzata Iwinska, Elzbieta Litwin-Staszewska, Marcin Zajac, Henryk Turski, Michal Bockowski, Dario Schiavon, Mikolaj Chlipala, Sandrine Juillaguet, Sylvie Contreras
Summary: This study presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN samples obtained through different GaN growth technologies. The samples exhibited negative magnetoresistivity at low temperatures, and the analysis revealed the relationship between the coherence time and temperature.
Article
Chemistry, Physical
Henryk Turski, Pawel Wolny, Mikolaj Chlipala, Marta Sawicka, Anna Reszka, Pawel Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czeslaw Skierbiszewski
Summary: Atomically thin metal adlayers are used as surfactants in semiconductor crystal growth, with the role of the adlayer in dopant incorporation in GaN being unexplored. Experimental study shows that the presence of atomically thin gallium or indium layers dramatically affects Ge incorporation in GaN, with indium surfactant layer promoting Ge incorporation while gallium surfactant layer promotes segregation of Ge to the surface. Understanding the role of surfactants is crucial for controlling GaN doping and achieving high n-type doping levels using Ge.
Article
Materials Science, Multidisciplinary
Leszek Konczewicz, Sandrine Juillaguet, Marcin Zajac, Elzbieta Litwin-Staszewska, Mohamed Al Khalfioui, Mathieu Leroux, Benjamin Damilano, Julien Brault, Sylvie Contreras
Summary: This article presents the results of low-temperature resistivity and Hall Effect studies of Mg-doped, ammonia-process-grown GaN samples grown on low-temperature buffers of GaN deposited on a sapphire substrate. The temperature dependences of the electrical transport properties before and after the annealing procedure are investigated, and it is found that the low temperatures transport properties are sensitive to the annealing procedure and hopping phenomena must be taken into account to describe the observed effects.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Physics, Applied
P. Wolny, H. Turski, G. Muziol, M. Sawicka, J. Smalc-Koziorowska, J. Moneta, M. Hajdel, A. Feduniewicz-Zmuda, S. Grzanka, R. Kudrawiec, C. Skierbiszewski
Summary: Staggered (In, Ga)N quantum wells are proposed to improve the efficiency of light-emitting diodes (LEDs) by increasing the wave-function overlap and reducing defects at the bottom interface. Plasma-assisted molecular beam epitaxy is used to grow staggered QWs, which show a significant increase in luminescence intensity and homogeneity compared to standard QWs.
PHYSICAL REVIEW APPLIED
(2023)
Article
Engineering, Electrical & Electronic
Marta Sawicka, Oliwia Golyga, Natalia Fiuczek, Grzegorz Muziol, Anna Feduniewicz- Zmuda, Marcin Siekacz, Henryk Turski, Robert Czernecki, Ewa Grzanka, Igor Prozheev, Filip Tuomisto, Czeslaw Skierbiszewski
Summary: A method for fabricating buried hollow channels inside GaN structures using selective area doping and electrochemical etching is presented. The channel width is defined by selective area ion implantation mask geometry and the vertical dimension depends on implantation energy and annealing conditions. The proposed technology has potential for integration with device fabrication and processing, as observed by X-ray diffraction for strain removal and surface roughness evaluation.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)