Deep traps in GaN-based structures as affecting the performance of GaN devices

Published 2015 View Full Article

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Title
Deep traps in GaN-based structures as affecting the performance of GaN devices
Authors
Keywords
III-Nitrides, Dislocations, Deep traps, HEMT, LED, Device degradation
Journal
MATERIALS SCIENCE & ENGINEERING R-REPORTS
Volume 94, Issue -, Pages 1-56
Publisher
Elsevier BV
Online
2015-05-27
DOI
10.1016/j.mser.2015.05.001

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