Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Polarization induced hole doping in graded AlxGa1−xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

(2013) Shibin Li et al.   APPLIED PHYSICS LETTERS

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

(2013) Jai Verma et al.   APPLIED PHYSICS LETTERS

Principal physical properties of GaN/AlN multiquantum well systems determined by density functional theory calculations

(2013) Pawel Strak et al.   JOURNAL OF APPLIED PHYSICS

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

(2012) Guowang Li et al.   IEEE ELECTRON DEVICE LETTERS

Charge transport in non-polar and semi-polar III-V nitride heterostructures

(2012) Aniruddha Konar et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

(2011) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

(2010) Takao Oto et al.   Nature Photonics

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

(2009) J. Renard et al.   APPLIED PHYSICS LETTERS

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

(2009) A. Bhattacharyya et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics