Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes

(2016) Min Ju Kim et al.   ACS Applied Materials & Interfaces

Development of nanoscale Ni-embedded single-wall carbon nanotubes by electroless plating for transparent conductive electrodes of 375 nm AlGaN-based ultraviolet light-emitting diodes

(2016) Jun-Beom Park et al.   Applied Physics Express

Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode

(2016) Jae-Seong Park et al.   CURRENT APPLIED PHYSICS

Growth process of hydrogenated amorphous carbon films synthesized by atmospheric pressure plasma enhanced CVD using nitrogen and helium as a dilution gas

(2016) Takanori Mori et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

(2016) Jun Hyuk Park et al.   JOURNAL OF APPLIED PHYSICS

Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes

(2016) Jae-Seong Park et al.   NANOTECHNOLOGY

Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices

(2016) T. C. Zheng et al.   Scientific Reports

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

(2016) Jong Won Lee et al.   Scientific Reports

The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

(2016) Tae Hoon Seo et al.   Scientific Reports

Indium Tin Oxide-Free Transparent Conductive Electrode for GaN-Based Ultraviolet Light-Emitting Diodes

(2015) Ja-Yeon Kim et al.   ACS Applied Materials & Interfaces

Hybrid electrode based on carbon nanotube and graphene for ultraviolet light-emitting diodes

(2015) Tae Hoon Seo et al.   Applied Physics Express

Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer

(2015) Masafumi Jo et al.   Applied Physics Express

Silver nanowires for transparent conductive electrode to GaN-based light-emitting diodes

(2015) Gyu-Jae Jeong et al.   APPLIED PHYSICS LETTERS

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

(2015) A. T. M. Golam Sarwar et al.   APPLIED PHYSICS LETTERS

Interband tunneling for hole injection in III-nitride ultraviolet emitters

(2015) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Insights into annealing-induced ohmic contact formation at graphene/p-GaN interface with a NiOxcontact layer

(2015) S Chandramohan et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385nm UV LED for significant emission enhancement

(2015) M.A. Borysiewicz et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer

(2015) Caichuan Wu et al.   SOLID-STATE ELECTRONICS

Improving the graphene electrode performance in ultra-violet light emitting diode using silver nanowire networks

(2015) Tae Hoon Seo et al.   Optical Materials Express

Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

(2015) Dong Yeong Kim et al.   Light-Science & Applications

Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385nm UV LED for significant emission enhancement

(2015) M.A. Borysiewicz et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures

(2015) Liancheng Wang et al.   Nano Energy

${\rm Ga}_{2}{\rm O}_{3}{:}{\rm ITO}$ Transparent Conducting Electrodes for Near-Ultraviolet Light-Emitting Diodes

(2014) Su Jin Kim et al.   IEEE ELECTRON DEVICE LETTERS

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

(2014) Hideki Hirayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Compound Ag nanocluster-graphene electrodes as transparent and current spreading electrodes for improved light output power in near-ultraviolet light emitting diodes

(2014) Tae Hoon Seo et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

High power AlGaN ultraviolet light emitters

(2014) Max Shatalov et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode

(2013) S. Chandramohan et al.   ACS Applied Materials & Interfaces

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

(2013) Toru Kinoshita et al.   Applied Physics Express

Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer

(2013) Jun Hyuk Park et al.   APPLIED PHYSICS LETTERS

Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes

(2013) Jae-Phil Shim et al.   APPLIED PHYSICS LETTERS

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

(2013) B. Neuschl et al.   APPLIED PHYSICS LETTERS

Polarization induced hole doping in graded AlxGa1−xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

(2013) Shibin Li et al.   APPLIED PHYSICS LETTERS

Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters

(2013) B. Cheng et al.   APPLIED PHYSICS LETTERS

Graphene-silver nanowire hybrid structure as a transparent and current spreading electrode in ultraviolet light emitting diodes

(2013) Tae Hoon Seo et al.   APPLIED PHYSICS LETTERS

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

(2013) Peng Dong et al.   APPLIED PHYSICS LETTERS

Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

(2013) Tetsuhiko Inazu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improved Ohmic contacts to plasma etched n-Al0.5Ga0.5N by annealing under nitrogen ambient before metal deposition

(2013) Wei Zhang et al.   JOURNAL OF APPLIED PHYSICS

Enhancement of light output power in ultraviolet light emitting diodes using graphene film on self-assembled Au nanocluster by agglomeration process

(2013) Tae Hoon Seo et al.   JOURNAL OF APPLIED PHYSICS

Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

(2013) Chu-Young Cho et al.   JOURNAL OF APPLIED PHYSICS

Graphene transparent electrode for enhanced optical power and thermal stability in GaN light-emitting diodes

(2013) Doo-Hyeb Youn et al.   NANOTECHNOLOGY

GaN-based ultraviolet light-emitting diodes with AuCl_3-doped graphene electrodes

(2013) Byung-Jae Kim et al.   OPTICS EXPRESS

Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces

(2013) Mickael Lapeyrade et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes

(2013) Min Ju Yun et al.   THIN SOLID FILMS

Enhanced Light Output Power of Near-Ultraviolet Light-Emitting Diodes with Au-Doped Graphene for Transparent and Current-Spreading Electrode

(2012) Tae Hoon Seo et al.   Applied Physics Express

Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics

(2012) S. Majety et al.   APPLIED PHYSICS LETTERS

Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

(2012) Byung-Jae Kim et al.   APPLIED PHYSICS LETTERS

Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

(2012) Shibin Li et al.   APPLIED PHYSICS LETTERS

AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes

(2012) Dong Ju Chae et al.   APPLIED PHYSICS LETTERS

Ohmic contact to n-AlGaN through bonding state transition at TiAl interface

(2012) Binbin Zhang et al.   JOURNAL OF APPLIED PHYSICS

Improved Electrical and Optical Properties of ITO/Ag/ITO Films by Using Electron Beam Irradiation and Their Application to Ultraviolet Light-Emitting Diode as Highly Transparent p-Type Electrodes

(2012) C. H. Hong et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence

(2012) Santino D. Carnevale et al.   NANO LETTERS

Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode

(2012) Yiyun Zhang et al.   Nanoscale

AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates

(2012) A. Knauer et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

(2011) Byung-Jae Kim et al.   APPLIED PHYSICS LETTERS

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

(2011) Yitao Liao et al.   APPLIED PHYSICS LETTERS

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

(2011) R. Dahal et al.   APPLIED PHYSICS LETTERS

Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al0.4Ga0.6N

(2011) Tao Li et al.   Chinese Physics B

Improved electrical and optical properties of ITO thin films by using electron beam irradiation and their application to UV-LED as highly transparent p-type electrodes

(2011) Y.J. Jo et al.   CURRENT APPLIED PHYSICS

Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

(2011) Cyril Pernot et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Work Function Engineering of Graphene Electrode via Chemical Doping

(2010) Yumeng Shi et al.   ACS Nano

Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

(2010) Akira Fujioka et al.   Applied Physics Express

Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

(2010) Hideki Hirayama et al.   Applied Physics Express

Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer

(2010) Yung Hsun Lin et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices

(2010) A.A. Allerman et al.   JOURNAL OF CRYSTAL GROWTH

Chemical doping of graphene

(2010) Hongtao Liu et al.   JOURNAL OF MATERIALS CHEMISTRY

100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

(2010) Takao Oto et al.   Nature Photonics

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

(2009) A. Bhattacharyya et al.   APPLIED PHYSICS LETTERS

Deep-Ultraviolet Light-Emitting Diodes

(2009) Michael S. Shur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ohmic Contact to High-Aluminum-Content AlGaN Epilayers

(2009) Surendra Srivastava et al.   JOURNAL OF ELECTRONIC MATERIALS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics