期刊
APPLIED PHYSICS LETTERS
卷 112, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5035372
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资金
- National Key R&D Program of China [2016YFE0110700]
- National Natural Science Foundation of China [U1632121, 61376008]
- Natural Science Foundation of Shanghai [18ZR1405000]
- State Key Laboratory of Luminescence and Applications [SKLA-2016-16]
The energy band alignment of AlN/beta-Ga2O3 heterostructures was investigated by X-ray photoelectron spectroscopy. The valence band offsets were estimated to be -0.09 +/- 0.1 eV (type II alignment) for AlN grown by plasma enhanced atomic layer deposition (PEALD) on beta-Ga2O3 and 0.72 +/- 0.1 eV (type I alignment) for AlN prepared by thermal atomic layer deposition (T-ALD) on beta-Ga2O3, which gives the conduction band offsets of 1.39 +/- 0.1 eV for PEALD AlN and 0.58 +/- 0.1 eV for T-ALD AlN. The large difference in the band alignment for the AlN/beta-Ga2O3 heterostructures is dominated by different levels of oxygen incorporation into the AlN films as a result of different deposition techniques. The determination of the band alignment of the AlN/beta-Ga2O3 heterostructure has significant implications for the design of electronic and optical devices based on AlN/beta-Ga2O3 heterojunctions. Published by AIP Publishing.
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