Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an Al0.2Ga0.8N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates

(2011) Shigefusa F. Chichibu et al.   Applied Physics Express

Collateral evidence for an excellent radiative performance of AlxGa1−xN alloy films of high AlN mole fractions

(2011) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Variation of Surface Potentials of Si-Doped AlxGa1-xN (0

(2010) Toshiharu Kubo et al.   Applied Physics Express

Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

(2010) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Identification of extremely radiative nature of AlN by time-resolved photoluminescence

(2010) T. Onuma et al.   APPLIED PHYSICS LETTERS

Light polarization characteristics of m-plane AlxGa1−xN films suffering from in-plane anisotropic tensile stresses

(2010) K. Hazu et al.   JOURNAL OF APPLIED PHYSICS

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

(2009) Anurag Tyagi et al.   Applied Physics Express

Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

(2009) T. Onuma et al.   JOURNAL OF APPLIED PHYSICS

Point defects in group-III nitride semiconductors studied by positron annihilation

(2009) A. Uedono et al.   JOURNAL OF CRYSTAL GROWTH

Bulk GaN crystals grown by HVPE

(2009) Kenji Fujito et al.   JOURNAL OF CRYSTAL GROWTH

Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density freestanding GaN substrates

(2008) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

High-quality nonpolarm-plane GaN substrates grown by HVPE

(2008) Kenji Fujito et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE