Defect-Resistant Radiative Performance ofm-Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

(2015) Shuji Nakamura   REVIEWS OF MODERN PHYSICS

Strongly nonparabolic variation of the band gap in InxAl1−xN with low indium content

(2015) Vitaly Z Zubialevich et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys

(2014) S. Schulz et al.   APPLIED PHYSICS LETTERS

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

(2014) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Enhanced UV luminescence from InAlN quantum well structures using two temperature growth

(2014) Vitaly Z. Zubialevich et al.   JOURNAL OF LUMINESCENCE

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

(2013) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

(2012) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Exciton binding energies in chalcopyrite semiconductors

(2012) Bernard Gil et al.   PHYSICAL REVIEW B

Anisotropic structural and optical properties of a-plane (112¯0) AlInN nearly-lattice-matched to GaN

(2011) Masihhur R. Laskar et al.   APPLIED PHYSICS LETTERS

Vacuum fluorescent displays utilizing ZnO nanoparticles

(2011) Charles H. Aaronson   JOURNAL OF APPLIED PHYSICS

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Point defects in group-III nitride semiconductors studied by positron annihilation

(2009) A. Uedono et al.   JOURNAL OF CRYSTAL GROWTH

Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation

(2008) Jayeeta Bhattacharyya et al.   APPLIED PHYSICS LETTERS

Optical energies of AlInN epilayers

(2008) K. Wang et al.   JOURNAL OF APPLIED PHYSICS