Temperature dependent electrical properties of pulse laser deposited Au/Ni/β-(AlGa)2O3 Schottky diode

High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

(2017) Jiancheng Yang et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy

(2017) Elaheh Ahmadi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

(AlGa)_2O_3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity

(2017) Qian Feng et al.   Optical Materials Express

Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga 2 O 3

(2017) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3

(2017) Shihyun Ahn et al.   ECS Journal of Solid State Science and Technology

Group-III Sesquioxides: Growth, Physical Properties and Devices

(2017) Holger von Wenckstern   Advanced Electronic Materials

Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction

(2016) Yuichi Oshima et al.   Applied Physics Express

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

(2016) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Variation of Band Gap and Lattice Parameters of β−(Al x Ga1−x )2 O3 Powder Produced by Solution Combustion Synthesis

(2016) Benjamin W. Krueger et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diodes at High Temperatures

(2016) Sooyeoun Oh et al.   ECS Journal of Solid State Science and Technology

Extraction of Schottky Barrier Parameters for Metal–Semiconductor Junctions on High Resistivity Inhomogeneous, Semiconductors

(2015) Andrea De Iacovo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dielectric function in the spectral range (0.5–8.5)eV of an (Alx Ga1−x)2O3 thin film with continuous composition spread

(2015) R. Schmidt-Grund et al.   JOURNAL OF APPLIED PHYSICS

Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3

(2015) Christian Kranert et al.   JOURNAL OF APPLIED PHYSICS

Wide bandgap engineering of (AlGa)2O3 films

(2014) Fabi Zhang et al.   APPLIED PHYSICS LETTERS

Measurement of bandgap energies in low-k organosilicates

(2014) M. T. Nichols et al.   JOURNAL OF APPLIED PHYSICS

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode

(2013) Jong-Hoon Shin et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Growth and Band Gap Control of Corundum-Structured α-(AlGa)2O3Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition

(2013) Hiroshi Ito et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition

(2013) Daniel Splith et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

(2012) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Inhomogeneous Barrier Height Analysis of (Ni/Au)–InAlGaN/GaN Schottky Barrier Diode

(2011) Nagarajan Subramaniyam et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

(2010) Yujin Hori et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing

(2009) Rikiya Suzuki et al.   APPLIED PHYSICS LETTERS

β-Al2xGa2-2xO3Thin Film Growth by Molecular Beam Epitaxy

(2009) Takayoshi Oshima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS