Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

Limits to the rate of oxygen transport in mixed-conducting oxides

(2017) Roger A. De Souza   Journal of Materials Chemistry A

Water-Induced Decoupling of Tracer and Electrochemical Oxygen Exchange Kinetics on Mixed Conducting Electrodes

(2016) Andreas Nenning et al.   Journal of Physical Chemistry Letters

Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices

(2016) C. Baeumer et al.   Nanoscale

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?

(2015) Felix Messerschmitt et al.   ADVANCED FUNCTIONAL MATERIALS

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

(2015) Michael Lübben et al.   ADVANCED MATERIALS

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin films

(2015) N. Raab et al.   AIP Advances

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

(2015) Astrid Marchewka et al.   Advanced Electronic Materials

Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

(2013) Stefan Tappertzhofen et al.   ACS Nano

Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films

(2013) Byung Joon Choi et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Electro-degradation and resistive switching of Fe-doped SrTiO3 single crystal

(2013) M. Wojtyniak et al.   JOURNAL OF APPLIED PHYSICS

Behavior of oxygen vacancies in single-crystal SrTiO3: Equilibrium distribution and diffusion kinetics

(2012) Roger A. De Souza et al.   PHYSICAL REVIEW B

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

(2010) Ruth Muenstermann et al.   ADVANCED MATERIALS

Strongly enhanced incorporation of oxygen into barium titanate based multilayer ceramic capacitors using water vapor

(2010) M. Kessel et al.   APPLIED PHYSICS LETTERS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

How Is Oxygen Incorporated into Oxides? A Comprehensive Kinetic Study of a Simple Solid-State Reaction with SrTiO3as a Model Material

(2008) Rotraut Merkle et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS