Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films

Cause and Prevention of Moisture-Induced Degradation of Resistance Random Access Memory Nanodevices

(2013) Xiang Yang et al.   ACS Nano

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

(2013) Jung Ho Yoon et al.   ADVANCED MATERIALS

Nanobatteries in redox-based resistive switches require extension of memristor theory

(2013) I. Valov et al.   Nature Communications

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

(2012) Feng Miao et al.   ACS Nano

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

A size-dependent nanoscale metal–insulator transition in random materials

(2011) Albert B. K. Chen et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

(2009) P. F. Carcia et al.   JOURNAL OF APPLIED PHYSICS