Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

The effects of Si doping on dislocation movement and tensile stress in GaN films

(2011) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition

(2011) Sang-Jun Lee et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Laser-induced Zn doping in GaN based light-emitting diode

(2010) Zheng-Qun Xue et al.   APPLIED PHYSICS LETTERS

Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer

(2010) Lei Wang et al.   APPLIED PHYSICS LETTERS

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

(2010) L. Zhang et al.   APPLIED PHYSICS LETTERS

Characteristics of Mg-doped and In–Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

(2010) S J Chung et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

(2010) Kunook Chung et al.   SCIENCE

Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact

(2009) June O Song et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping

(2008) C. Bayram et al.   APPLIED PHYSICS LETTERS

Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN

(2008) Gon Namkoong et al.   APPLIED PHYSICS LETTERS

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy

(2008) Shawn D. Burnham et al.   JOURNAL OF APPLIED PHYSICS

Delta-doping optimization for high quality p-type GaN

(2008) C. Bayram et al.   JOURNAL OF APPLIED PHYSICS