Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency
出版年份 2017 全文链接
标题
Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency
作者
关键词
-
出版物
ECS Journal of Solid State Science and Technology
Volume 6, Issue 4, Pages Q42-Q52
出版商
The Electrochemical Society
发表日期
2017-02-09
DOI
10.1149/2.0111704jss
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes
- (2016) Min Ju Kim et al. ACS Applied Materials & Interfaces
- Development of nanoscale Ni-embedded single-wall carbon nanotubes by electroless plating for transparent conductive electrodes of 375 nm AlGaN-based ultraviolet light-emitting diodes
- (2016) Jun-Beom Park et al. Applied Physics Express
- Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode
- (2016) Jae-Seong Park et al. CURRENT APPLIED PHYSICS
- Growth process of hydrogenated amorphous carbon films synthesized by atmospheric pressure plasma enhanced CVD using nitrogen and helium as a dilution gas
- (2016) Takanori Mori et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes
- (2016) Jun Hyuk Park et al. JOURNAL OF APPLIED PHYSICS
- Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes
- (2016) Jae-Seong Park et al. NANOTECHNOLOGY
- Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices
- (2016) T. C. Zheng et al. Scientific Reports
- An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission
- (2016) Jong Won Lee et al. Scientific Reports
- The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes
- (2016) Tae Hoon Seo et al. Scientific Reports
- Indium Tin Oxide-Free Transparent Conductive Electrode for GaN-Based Ultraviolet Light-Emitting Diodes
- (2015) Ja-Yeon Kim et al. ACS Applied Materials & Interfaces
- Hybrid electrode based on carbon nanotube and graphene for ultraviolet light-emitting diodes
- (2015) Tae Hoon Seo et al. Applied Physics Express
- Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer
- (2015) Masafumi Jo et al. Applied Physics Express
- Silver nanowires for transparent conductive electrode to GaN-based light-emitting diodes
- (2015) Gyu-Jae Jeong et al. APPLIED PHYSICS LETTERS
- Tunnel junction enhanced nanowire ultraviolet light emitting diodes
- (2015) A. T. M. Golam Sarwar et al. APPLIED PHYSICS LETTERS
- Interband tunneling for hole injection in III-nitride ultraviolet emitters
- (2015) Yuewei Zhang et al. APPLIED PHYSICS LETTERS
- Insights into annealing-induced ohmic contact formation at graphene/p-GaN interface with a NiOxcontact layer
- (2015) S Chandramohan et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385nm UV LED for significant emission enhancement
- (2015) M.A. Borysiewicz et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
- Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer
- (2015) Caichuan Wu et al. SOLID-STATE ELECTRONICS
- Improving the graphene electrode performance in ultra-violet light emitting diode using silver nanowire networks
- (2015) Tae Hoon Seo et al. Optical Materials Express
- Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission
- (2015) Dong Yeong Kim et al. Light-Science & Applications
- Nanocrystalline sputter-deposited ZnMgO:Al transparent p-type electrode in GaN-based 385nm UV LED for significant emission enhancement
- (2015) M.A. Borysiewicz et al. Materials Science and Engineering B-Advanced Functional Solid-State Materials
- Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures
- (2015) Liancheng Wang et al. Nano Energy
- ${\rm Ga}_{2}{\rm O}_{3}{:}{\rm ITO}$ Transparent Conducting Electrodes for Near-Ultraviolet Light-Emitting Diodes
- (2014) Su Jin Kim et al. IEEE ELECTRON DEVICE LETTERS
- Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
- (2014) Hideki Hirayama et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Compound Ag nanocluster-graphene electrodes as transparent and current spreading electrodes for improved light output power in near-ultraviolet light emitting diodes
- (2014) Tae Hoon Seo et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- High power AlGaN ultraviolet light emitters
- (2014) Max Shatalov et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode
- (2013) S. Chandramohan et al. ACS Applied Materials & Interfaces
- Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
- (2013) Toru Kinoshita et al. Applied Physics Express
- Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer
- (2013) Jun Hyuk Park et al. APPLIED PHYSICS LETTERS
- Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes
- (2013) Jae-Phil Shim et al. APPLIED PHYSICS LETTERS
- Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
- (2013) B. Neuschl et al. APPLIED PHYSICS LETTERS
- Polarization induced hole doping in graded AlxGa1−xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy
- (2013) Shibin Li et al. APPLIED PHYSICS LETTERS
- Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters
- (2013) B. Cheng et al. APPLIED PHYSICS LETTERS
- Graphene-silver nanowire hybrid structure as a transparent and current spreading electrode in ultraviolet light emitting diodes
- (2013) Tae Hoon Seo et al. APPLIED PHYSICS LETTERS
- 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
- (2013) Peng Dong et al. APPLIED PHYSICS LETTERS
- Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
- (2013) Tetsuhiko Inazu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Improved Ohmic contacts to plasma etched n-Al0.5Ga0.5N by annealing under nitrogen ambient before metal deposition
- (2013) Wei Zhang et al. JOURNAL OF APPLIED PHYSICS
- Enhancement of light output power in ultraviolet light emitting diodes using graphene film on self-assembled Au nanocluster by agglomeration process
- (2013) Tae Hoon Seo et al. JOURNAL OF APPLIED PHYSICS
- Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene
- (2013) Chu-Young Cho et al. JOURNAL OF APPLIED PHYSICS
- Graphene transparent electrode for enhanced optical power and thermal stability in GaN light-emitting diodes
- (2013) Doo-Hyeb Youn et al. NANOTECHNOLOGY
- GaN-based ultraviolet light-emitting diodes with AuCl_3-doped graphene electrodes
- (2013) Byung-Jae Kim et al. OPTICS EXPRESS
- Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces
- (2013) Mickael Lapeyrade et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes
- (2013) Min Ju Yun et al. THIN SOLID FILMS
- Enhanced Light Output Power of Near-Ultraviolet Light-Emitting Diodes with Au-Doped Graphene for Transparent and Current-Spreading Electrode
- (2012) Tae Hoon Seo et al. Applied Physics Express
- Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics
- (2012) S. Majety et al. APPLIED PHYSICS LETTERS
- Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes
- (2012) Byung-Jae Kim et al. APPLIED PHYSICS LETTERS
- Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
- (2012) Shibin Li et al. APPLIED PHYSICS LETTERS
- AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes
- (2012) Dong Ju Chae et al. APPLIED PHYSICS LETTERS
- Ohmic contact to n-AlGaN through bonding state transition at TiAl interface
- (2012) Binbin Zhang et al. JOURNAL OF APPLIED PHYSICS
- Improved Electrical and Optical Properties of ITO/Ag/ITO Films by Using Electron Beam Irradiation and Their Application to Ultraviolet Light-Emitting Diode as Highly Transparent p-Type Electrodes
- (2012) C. H. Hong et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence
- (2012) Santino D. Carnevale et al. NANO LETTERS
- Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode
- (2012) Yiyun Zhang et al. Nanoscale
- AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates
- (2012) A. Knauer et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
- (2011) Byung-Jae Kim et al. APPLIED PHYSICS LETTERS
- AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
- (2011) Yitao Liao et al. APPLIED PHYSICS LETTERS
- Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material
- (2011) R. Dahal et al. APPLIED PHYSICS LETTERS
- Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al0.4Ga0.6N
- (2011) Tao Li et al. Chinese Physics B
- Improved electrical and optical properties of ITO thin films by using electron beam irradiation and their application to UV-LED as highly transparent p-type electrodes
- (2011) Y.J. Jo et al. CURRENT APPLIED PHYSICS
- Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes
- (2011) Cyril Pernot et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Work Function Engineering of Graphene Electrode via Chemical Doping
- (2010) Yumeng Shi et al. ACS Nano
- Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
- (2010) Akira Fujioka et al. Applied Physics Express
- Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
- (2010) Hideki Hirayama et al. Applied Physics Express
- Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer
- (2010) Yung Hsun Lin et al. IEEE PHOTONICS TECHNOLOGY LETTERS
- Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices
- (2010) A.A. Allerman et al. JOURNAL OF CRYSTAL GROWTH
- Chemical doping of graphene
- (2010) Hongtao Liu et al. JOURNAL OF MATERIALS CHEMISTRY
- 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
- (2010) Takao Oto et al. Nature Photonics
- Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures
- (2010) J. Simon et al. SCIENCE
- Advances in group III-nitride-based deep UV light-emitting diode technology
- (2010) M Kneissl et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
- (2009) A. Bhattacharyya et al. APPLIED PHYSICS LETTERS
- Deep-Ultraviolet Light-Emitting Diodes
- (2009) Michael S. Shur et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Ohmic Contact to High-Aluminum-Content AlGaN Epilayers
- (2009) Surendra Srivastava et al. JOURNAL OF ELECTRONIC MATERIALS
- Ultraviolet light-emitting diodes based on group three nitrides
- (2008) Asif Khan et al. Nature Photonics
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