Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes

(2013) Han-Youl Ryu et al.   Applied Physics Express

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

(2013) Peng Dong et al.   APPLIED PHYSICS LETTERS

Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes

(2013) Xing Yan et al.   JOURNAL OF APPLIED PHYSICS

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

(2012) Max Shatalov et al.   Applied Physics Express

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

(2012) J. E. Northrup et al.   APPLIED PHYSICS LETTERS

Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

(2010) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Deep-Ultraviolet Light-Emitting Diodes

(2009) Michael S. Shur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

(2008) B.J. Kim et al.   THIN SOLID FILMS