AFM and XPS studies on material removal mechanism of sapphire wafer during chemical mechanical polishing (CMP)

Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization

(2013) Xiaolei Shi et al.   APPLIED SURFACE SCIENCE

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

(2012) Hideo Aida et al.   CURRENT APPLIED PHYSICS

Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers

(2012) Yu-Sheng Lin et al.   JOURNAL OF CRYSTAL GROWTH

Material removal mechanism of Cu-CMP studied by nano-scratching under various environmental conditions

(2012) Wei-En Fu et al.   WEAR

Evaluation of double sided lapping using a fixed abrasive pad for sapphire substrates

(2012) Hyuk-Min Kim et al.   WEAR

Two-Step Chemical Mechanical Polishing of Sapphire Substrate

(2010) Zefang Zhang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Preparation, quality characterization, service performance evaluation and its modification of sapphire crystal for optical window and dome application

(2009) Guigen Wang et al.   MATERIALS & DESIGN

A study of intensity of tribochemical contact interaction between a polishing compound and sapphire in machining

(2008) V. V. Rogov et al.   Journal of Superhard Materials