Normally-off AlGaN/GaN MOS-HEMT using ultra-thin Al0.45 Ga0.55 N barrier layer

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

(2014) Zhe Xu et al.   ELECTRONICS LETTERS

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

(2014) Zhe Xu et al.   IEEE ELECTRON DEVICE LETTERS

Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

(2014)   IEEE ELECTRON DEVICE LETTERS

Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

(2014)   IEEE ELECTRON DEVICE LETTERS

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

(2014) Ahmed Chakroun et al.   IEEE ELECTRON DEVICE LETTERS

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

(2014) Zenji Yatabe et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

(2013) Ye Wang et al.   IEEE ELECTRON DEVICE LETTERS

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

(2013) Zhikai Tang et al.   IEEE ELECTRON DEVICE LETTERS

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

(2011) Herwig Hahn et al.   Applied Physics Express

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

(2008) Tohru Oka et al.   IEEE ELECTRON DEVICE LETTERS