Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

Fabrication of 100-nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD

(2012) Ming Li et al.   IEEE ELECTRON DEVICE LETTERS

Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates

(2012) Md. Shahinur Rahman et al.   JOURNAL OF APPLIED PHYSICS

Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique

(2011) Sanjeewa Dissanayake et al.   JOURNAL OF APPLIED PHYSICS

Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

(2011) Shankar Swaminathan et al.   JOURNAL OF APPLIED PHYSICS

Development of hafnium based high-k materials—A review

(2011) J.H. Choi et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs

(2011) Bing-Fong Hsieh et al.   SOLID-STATE ELECTRONICS

Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method

(2011) K. Minami et al.   THIN SOLID FILMS

Extrinsic interface formation of HfO2 and Al2O3∕GeOx gate stacks on Ge (100) substrates

(2009) H. Seo et al.   JOURNAL OF APPLIED PHYSICS

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

(2008) J. B. BOOS et al.   IEICE TRANSACTIONS ON ELECTRONICS

Anomalous charge trapping dynamics in cerium oxide grown on germanium substrate

(2008) M. S. Rahman et al.   JOURNAL OF APPLIED PHYSICS

Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates

(2008) S. Y. Chiam et al.   JOURNAL OF APPLIED PHYSICS