Effect of hydrogen participation on the improvement in electrical characteristics of HfO2gate dielectrics by post-deposition remote N2, N2/H2, and NH3plasma treatments

Title
Effect of hydrogen participation on the improvement in electrical characteristics of HfO2gate dielectrics by post-deposition remote N2, N2/H2, and NH3plasma treatments
Authors
Keywords
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Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 46, Issue 5, Pages 055103
Publisher
IOP Publishing
Online
2012-12-28
DOI
10.1088/0022-3727/46/5/055103

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