Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

(2016) Ming Yang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of Al2O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors

(2016) Sameer Joglekar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

(2016) Huan-Yu Shih et al.   Nanoscale Research Letters

Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures

(2016) Junji Kotani et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

(2016) Huan-Yu Shih et al.   Nanoscale Research Letters

Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

(2015) Po-Chun Yeh et al.   Applied Physics Express

Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

(2015) Xiao-Guang He et al.   Chinese Physics B

Polarization induced hole doping in graded AlxGa1−xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

(2013) Shibin Li et al.   APPLIED PHYSICS LETTERS

High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

(2013) Ki-Sik Im et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process

(2013) Xinke Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence

(2013) Mazhar Abbasi et al.   Nanoscale Research Letters

Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

(2012) Shibin Li et al.   APPLIED PHYSICS LETTERS

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

(2012) Shenghou Liu et al.   IEEE ELECTRON DEVICE LETTERS

Tri-Gate Normally-Off GaN Power MISFET

(2012) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET

(2012) Ki-Sik Im et al.   IEEE ELECTRON DEVICE LETTERS

Polarization doping: Reservoir effects of the substrate in AlGaN graded layers

(2012) Shibin Li et al.   JOURNAL OF APPLIED PHYSICS

Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

(2011) Yuhua Wen et al.   APPLIED PHYSICS LETTERS

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

(2011) Ki-Won Kim et al.   IEEE ELECTRON DEVICE LETTERS

Normally Off AlGaN/GaN Metal–2DEG Tunnel-Junction Field-Effect Transistors

(2011) Li Yuan et al.   IEEE ELECTRON DEVICE LETTERS

Electron and hole-related luminescence processes in gate injection transistors

(2010) M. Meneghini et al.   APPLIED PHYSICS LETTERS

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

(2010) Ki-Sik Im et al.   IEEE ELECTRON DEVICE LETTERS

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

(2009) Kota Ohi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

(2008) Takahiro Tamura et al.   Applied Physics Express