Thin TiOxlayer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory
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Title
Thin TiOxlayer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory
Authors
Keywords
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Journal
Nanoscale
Volume 9, Issue 6, Pages 2358-2368
Publisher
Royal Society of Chemistry (RSC)
Online
2017-01-26
DOI
10.1039/c6nr08470b
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Note: Only part of the references are listed.- Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices
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- Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell
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