Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors

High-Speed and Low-Energy Nitride Memristors

(2016) Byung Joon Choi et al.   ADVANCED FUNCTIONAL MATERIALS

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

(2016) Suhas Kumar et al.   ADVANCED MATERIALS

The phase transition in VO2 probed using x-ray, visible and infrared radiations

(2016) Suhas Kumar et al.   APPLIED PHYSICS LETTERS

An accurate locally active memristor model for S-type negative differential resistance in NbOx

(2016) Gary A. Gibson et al.   APPLIED PHYSICS LETTERS

Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory

(2016) Po-Hsun Chen et al.   IEEE ELECTRON DEVICE LETTERS

Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

(2016) Jiantao Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Technological Exploration of RRAM Crossbar Array for Matrix-Vector Multiplication

(2016) Lixue Xia et al.   JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

(2016) Kyung Min Kim et al.   NANO LETTERS

Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

(2016) Christoph Baeumer et al.   Nature Communications

Thermally induced crystallization in NbO2 thin films

(2016) Jiaming Zhang et al.   Scientific Reports

Trilayer Tunnel Selectors for Memristor Memory Cells

(2015) Byung Joon Choi et al.   ADVANCED MATERIALS

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films

(2015) Kyung Min Kim et al.   Scientific Reports

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Sequential Electronic and Structural Transitions in VO2Observed Using X-ray Absorption Spectromicroscopy

(2014) Suhas Kumar et al.   ADVANCED MATERIALS

Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices

(2014) Mohammad Noman et al.   APPLIED PHYSICS LETTERS

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

(2013) Sungho Kim et al.   Scientific Reports

Engineering nonlinearity into memristors for passive crossbar applications

(2012) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer

(2012) Guangsheng Tang et al.   Nanoscale

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS