Technological Exploration of RRAM Crossbar Array for Matrix-Vector Multiplication
Published 2016 View Full Article
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Title
Technological Exploration of RRAM Crossbar Array for Matrix-Vector Multiplication
Authors
Keywords
resistive switching random access memory (RRAM), machine learning, electronic design automation, matrix-vector multiplication, non-ideal factor
Journal
JOURNAL OF COMPUTER SCIENCE AND TECHNOLOGY
Volume 31, Issue 1, Pages 3-19
Publisher
Springer Nature
Online
2016-01-08
DOI
10.1007/s11390-016-1608-8
References
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Related references
Note: Only part of the references are listed.- RRAM-Based Analog Approximate Computing
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- Memristor Crossbar-Based Neuromorphic Computing System: A Case Study
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- $\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
- (2011) Z. Fang et al. IEEE ELECTRON DEVICE LETTERS
- Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells
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- Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
- (2011) Kyungah Seo et al. NANOTECHNOLOGY
- Optimization of sparse matrix–vector multiplication on emerging multicore platforms
- (2008) Samuel Williams et al. PARALLEL COMPUTING
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