Al-Doped ZnO Transistors Processed from Solution at 120 °C

Title
Al-Doped ZnO Transistors Processed from Solution at 120 °C
Authors
Keywords
-
Journal
Advanced Electronic Materials
Volume 2, Issue 6, Pages 1600070
Publisher
Wiley
Online
2016-04-11
DOI
10.1002/aelm.201600070

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