High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices
Authors
Keywords
-
Journal
Advanced Science
Volume 2, Issue 7, Pages 1500058
Publisher
Wiley
Online
2015-05-26
DOI
10.1002/advs.201500058
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices
- (2015) John G. Labram et al. ADVANCED FUNCTIONAL MATERIALS
- Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis
- (2014) Hendrik Faber et al. ACS Applied Materials & Interfaces
- High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures
- (2014) Stuart R. Thomas et al. APPLIED PHYSICS LETTERS
- Synergistic Approach to High-Performance Oxide Thin Film Transistors Using a Bilayer Channel Architecture
- (2013) Xinge Yu et al. ACS Applied Materials & Interfaces
- High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C
- (2013) Yen-Hung Lin et al. ADVANCED MATERIALS
- Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process
- (2013) Yen-Hung Lin et al. APPLIED PHYSICS LETTERS
- Solution-processable metal oxide semiconductors for thin-film transistor applications
- (2013) Stuart R. Thomas et al. CHEMICAL SOCIETY REVIEWS
- Solution-Processable Zirconium Oxide Gate Dielectrics for Flexible Organic Field Effect Transistors Operated at Low Voltages
- (2013) Young Min Park et al. CHEMISTRY OF MATERIALS
- High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors
- (2013) Kulbinder K. Banger et al. CHEMISTRY OF MATERIALS
- Single-source dual-layer amorphous IGZO thin-film transistors for display and circuit applications
- (2013) Manoj Nag et al. Journal of the Society for Information Display
- An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates
- (2013) Young Hwan Hwang et al. NPG Asia Materials
- Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors
- (2013) Cheol Hyoun Ahn et al. Scientific Reports
- Flexible organic/inorganic heterojunction transistors with low operating voltage
- (2013) Ye Zhou et al. Journal of Materials Chemistry C
- Monolithically Integrated Circuits from Functional Oxides
- (2013) Rainer Jany et al. Advanced Materials Interfaces
- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
- (2012) E. Fortunato et al. ADVANCED MATERIALS
- High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures
- (2012) S.-L. Wang et al. APPLIED PHYSICS LETTERS
- Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
- (2012) Yong-Hoon Kim et al. NATURE
- High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air
- (2011) George Adamopoulos et al. ADVANCED MATERIALS
- Magnesium Doping Controlled Density and Mobility of Two-Dimensional Electron Gas in Mg$_{x}$Zn$_{1-x}$O/ZnO Heterostructures
- (2011) Joseph Falson et al. Applied Physics Express
- Low-temperature, solution-processed metal oxide thin film transistors
- (2011) Sunho Jeong et al. JOURNAL OF MATERIALS CHEMISTRY
- Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors
- (2011) A. Olziersky et al. MATERIALS CHEMISTRY AND PHYSICS
- Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
- (2011) Myung-Gil Kim et al. NATURE MATERIALS
- Sketched oxide single-electron transistor
- (2011) Guanglei Cheng et al. Nature Nanotechnology
- Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
- (2011) Hyeon-Kyun Noh et al. PHYSICAL REVIEW B
- Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
- (2011) Joon Seok Park et al. THIN SOLID FILMS
- High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel
- (2010) Jun Liu et al. ADVANCED MATERIALS
- Organic Transistors in Optical Displays and Microelectronic Applications
- (2010) Gerwin Gelinck et al. ADVANCED MATERIALS
- Observation of the fractional quantum Hall effect in an oxide
- (2010) A. Tsukazaki et al. NATURE MATERIALS
- Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
- (2010) K. K. Banger et al. NATURE MATERIALS
- Two-Dimensional Quantum Oscillations of the Conductance atLaAlO3/SrTiO3Interfaces
- (2010) A. D. Caviglia et al. PHYSICAL REVIEW LETTERS
- Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
- (2009) Sunho Jeong et al. ADVANCED MATERIALS
- Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model
- (2009) Toshio Kamiya et al. Journal of Display Technology
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*
- (2009) Toshio Kamiya et al. Journal of Display Technology
- Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3
- (2009) P. D. C. King et al. PHYSICAL REVIEW B
- Fundamentals of zinc oxide as a semiconductor
- (2009) Anderson Janotti et al. REPORTS ON PROGRESS IN PHYSICS
- The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs
- (2008) P. Barquinha et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
- (2008) Gaudenzio Meneghesso et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy
- (2008) Aron Walsh et al. PHYSICAL REVIEW LETTERS
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started