Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs

Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

(2016) Tae-Young Kim et al.   ACS Nano

Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET

(2016) Shubhadeep Bhattacharjee et al.   IEEE ELECTRON DEVICE LETTERS

Surface State Engineering of Metal/MoS2Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

(2016) Shubhadeep Bhattacharjee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Surface defect passivation of MoS2 by sulfur, selenium, and tellurium

(2016) Ying Wang et al.   JOURNAL OF APPLIED PHYSICS

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening

(2015) Zhihao Yu et al.   ADVANCED MATERIALS

Spotting 2D atomic layers on aluminum nitride thin films

(2015) Hareesh Chandrasekar et al.   NANOTECHNOLOGY

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Separation of interlayer resistance in multilayer MoS2 field-effect transistors

(2014) Junhong Na et al.   APPLIED PHYSICS LETTERS

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2

(2014) Lingming Yang et al.   NANO LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Influence of O2flow rate on HfO2gate dielectrics for back-gated graphene transistors

(2014) Kolla Lakshmi Ganapathi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

(2014) Zhihao Yu et al.   Nature Communications

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

(2013) Sheneve Z. Butler et al.   ACS Nano

Optimization of HfO2 films for high transconductance back gated graphene transistors

(2013) Kolla Lakshmi Ganapathi et al.   APPLIED PHYSICS LETTERS

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

(2013) Hareesh Chandrasekar et al.   APPLIED PHYSICS LETTERS

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

(2013) Han Liu et al.   NANO LETTERS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Screening and interlayer coupling in multilayer MoS2

(2013) Saptarshi Das et al.   Physica Status Solidi-Rapid Research Letters

Mobility enhancement and temperature dependence in top-gated single-layer MoS2

(2013) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

One-Dimensional Electrical Contact to a Two-Dimensional Material

(2013) L. Wang et al.   SCIENCE

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

Deposition of High-QualityHfO2on Graphene and the Effect of Remote Oxide Phonon Scattering

(2010) K. Zou et al.   PHYSICAL REVIEW LETTERS