Memory window engineering of Ta2O5−x oxide-based resistive switches via incorporation of various insulating frames

Novel Complementary Resistive Switch Crossbar Memory Write and Read Schemes

(2015) Yuanfan Yang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

(2015) Yoon Cheol Bae et al.   Scientific Reports

Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

(2014) Daeseok Lee et al.   ADVANCED MATERIALS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications

(2014) Yingtao Li et al.   NANOTECHNOLOGY

Multi-level resistive switching observations in asymmetric Pt/Ta2O5−x/TiOxNy/TiN/Ta2O5−x/Pt multilayer configurations

(2013) Ah Rahm Lee et al.   APPLIED PHYSICS LETTERS

Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation

(2013) Jeong-Hoon Oh et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

(2013) Omid Kavehei et al.   Nanoscale

Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

(2013) E Linn et al.   NANOTECHNOLOGY

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

(2013) Gyeong-Su Park et al.   Nature Communications

Scaling Effect on Unipolar and Bipolar Resistive Switching of Metal Oxides

(2013) Takeshi Yanagida et al.   Scientific Reports

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

(2012) Gun Hwan Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks

(2011) Yoon Cheol Bae et al.   ADVANCED FUNCTIONAL MATERIALS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Spectromicroscopy of tantalum oxide memristors

(2011) John Paul Strachan et al.   APPLIED PHYSICS LETTERS

Crossbar Logic Using Bipolar and Complementary Resistive Switches

(2011) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

(2010) Shimeng Yu et al.   NANOTECHNOLOGY

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

RESET Mechanism of TiOx Resistance-Change Memory Device

(2009) Wei Wang et al.   IEEE ELECTRON DEVICE LETTERS

High density 3D memory architecture based on the resistive switching effect

(2009) C. Kügeler et al.   SOLID-STATE ELECTRONICS