Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

(2011) Seo Hyoung Chang et al.   ADVANCED MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

(2011) Zheng Yang et al.   Annual Review of Materials Research

TiO2—a prototypical memristive material

(2011) K Szot et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

(2010) Laurent Cario et al.   ADVANCED MATERIALS

Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

(2010) Chun-Hu Cheng et al.   ADVANCED MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

(2008) S.-E. Ahn et al.   ADVANCED MATERIALS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films

(2008) Dmitry Ruzmetov et al.   PHYSICAL REVIEW B