The Effects of Direct Source-to-Drain Tunneling and Variation in the Body Thickness on (100) and (110) Sub-10-nm Si Double-Gate Transistors

Published 2015 View Full Article

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Title
The Effects of Direct Source-to-Drain Tunneling and Variation in the Body Thickness on (100) and (110) Sub-10-nm Si Double-Gate Transistors
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 5, Pages 427-429
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-03-17
DOI
10.1109/led.2015.2413785

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